LP3910SQX-AP by Texas Instruments | Other Function Semiconductors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	LP3910SQX-AP
Description	POWER SUPPLY SUPPORT CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: HVQCCN; Package Shape: SQUARE; Surface Mount: YES;
Datasheet	LP3910SQX-AP Datasheet
In Stock	2,645

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Width (mm):	6 mm
Maximum Seated Height:	.8 mm
Minimum Supply Voltage (Vsup):	2.5 V
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
No. of Terminals:	48
Terminal Position:	QUAD
Package Style (Meter):	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
Other IC type:	POWER SUPPLY SUPPORT CIRCUIT
Length:	6 mm
JESD-30 Code:	S-XQCC-N48
Adjustable Threshold:	YES
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	85 Cel
No. of Channels:	5
Package Code:	HVQCCN
Nominal Supply Voltage (Vsup):	5 V
Terminal Pitch:	.4 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,645	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;