Texas Instruments - LS619

  1. Home
  2. Texas Instruments - LS619
LS619 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number LS619
Description PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum Response Time: .000008 s;
Datasheet LS619 Datasheet
In Stock1,449
NAME DESCRIPTION
Maximum Dark Current: 25 nA
Shape: ROUND
Configuration: SINGLE
Sub-Category: Photo Transistors
Minimum Operating Temperature: -65 Cel
Mounting Feature: THROUGH HOLE MOUNT
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 9 mA
Maximum Power Dissipation: .05 W
Additional Features: TTL COMPATIBLE
Maximum Response Time: .000008 s
Maximum Operating Temperature: 125 Cel
Minimum Collector-emitter Breakdown Voltage: 50 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,449 - -

Popular Products

Category Top Products

QSD123 by Onsemi

QSD123

Onsemi

The Onsemi QSD123 is a 5mm single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, with max power dissipation of 0.1W. Ideal for applications requiring fast response time and IR detection in through-hole mounting setups.
SDP8405-003 by Honeywell Sensing And Control

SDP8405-003

Honeywell Sensing And Control

SDP8405-003 by Honeywell Sensing And Control is a PHOTO TRANSISTOR with a max operating temperature of 100°C and a min operating temperature of -40°C. It has a max power dissipation of 0.07W and a max dark current of 100nA. This through-hole mount optoelectronic component is suitable for various applications requiring fast response time.
TIL405 by Texas Instruments

TIL405

Texas Instruments

TIL405 by Texas Instruments is a phototransistor with max operating temp of 125°C and min of -60°C. It has a max power dissipation of 0.05W, dark current of 25nA, and response time of 8μs. Ideal for applications requiring precise light detection in environments with varying temperatures.
BPX86 by Osram Opto Semiconductors

BPX86

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); No. of Functions: 6; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;
SFH3211 by Infineon Technologies

SFH3211

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 860;
TIL180 by Texas Instruments

TIL180

Texas Instruments

Photo Transistors; Maximum Response Time: .000125 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 70 Cel; Maximum On State Current: .0001 A; Maximum Power Dissipation: .09 W;
SPS289C by Onsemi

SPS289C

Onsemi

SPS289C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It operates b/w -25 °C to 80°C, has max power dissipation of 0.05W, and response time of 0.00003s. Ideal for applications requiring through hole mounting and on-state current up to 0.03A.
LS611 by Texas Instruments

LS611

Texas Instruments

LS611 by Texas Instruments is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.05W. Ideal for applications requiring fast response times and infrared range detection.
TPS615-C by Toshiba

TPS615-C

Toshiba

PHOTO TRANSISTOR; Peak Wavelength (nm): 800; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -30 Cel; Maximum Dark Current: 100 nA;
OP800A by Optek Technology

OP800A

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 890; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Shape: ROUND;
SFH309FA-6 by Infineon Technologies

SFH309FA-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 900; Minimum Operating Temperature: -55 Cel;
TPS611(F) by Toshiba

TPS611(F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: HIGH SENSITIVITY; Shape: ROUND; Maximum Power Dissipation: .15 W; Infrared (IR) Range: YES;
BPX89 by Siemens

BPX89

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES; No. of Functions: 9;
SFH325FA2 by Infineon Technologies

SFH325FA2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 200 nA;
TIL606 by Texas Instruments

TIL606

Texas Instruments

TIL606 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, dissipating up to 0.05W power. With fast response time of 8ns, it's ideal for surface mount applications requiring precise light detection.
TPS616(C,F) by Toshiba

TPS616(C,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum On State Current: .02 A; Shape: ROUND; Peak Wavelength (nm): 900;
PH101 by Renesas Electronics

PH101

Renesas Electronics

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 20 V; Additional Features: HIGH SENSITIVITY; Peak Wavelength (nm): 850;
SFH3211-4 by Infineon Technologies

SFH3211-4

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Dark Current: 200 nA; Minimum Operating Temperature: -40 Cel;
PT91-21C/TR7 by Everlight Electronics

PT91-21C/TR7

Everlight Electronics

The Everlight Electronics PT91-21C/TR7 is a 1.9mm phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with nominal light current of 1.5mA and max dark current of 100nA. Ideal for applications requiring IR detection and collector-emitter breakdown voltage of at least 30V.
TEFT4300 by Telefunken Microelectronics

TEFT4300

Telefunken Microelectronics

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Power Dissipation: .185 W;