M38510/06302BFX by Texas Instruments | Interface ICs

Image shown is a representation only.

Manufacturer	Texas Instruments
Manufacturer's Part Number	M38510/06302BFX
Description	ECL TO TTL TRANSLATOR; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 16; Package Code: DFP; Package Shape: RECTANGULAR;
In Stock	1,620

NAME	DESCRIPTION
No. of Bits:	1
Package Body Material:	CERAMIC, GLASS-SEALED
Output Polarity:	TRUE
Nominal Supply Voltage:	5 V
Output Latch/Register:	NONE
Maximum Delay:	8 ns
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Functions:	4
No. of Terminals:	16
Qualification:	Qualified
Terminal Position:	DUAL
Package Style (Meter):	FLATPACK
Screening Level:	MIL-PRF-38535
JESD-30 Code:	R-GDFP-F16
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Nominal Negative Supply Voltage:	-5.2 V
Maximum Operating Temperature:	125 Cel
Package Code:	DFP
Interface IC Type:	ECL TO TTL TRANSLATOR
Temperature Grade:	MILITARY

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,620	-	-

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.

KSZ9031RNXIA by Microchip is a 48-terminal Ethernet transceiver with data rate of 1000 Mbps. Operating temperature range from -40 to 85°C makes it suitable for industrial applications. This square-shaped chip carrier has a very thin profile and matte tin finish, ideal for network interfaces.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

BSS123LT1G by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 0.17A drain current, and 6 ohm on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.225W. It comes in a small outline package with gull wing terminals and can withstand temperatures from -55 to 150°C.

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.