MSP430C1101IPWR by Texas Instruments | Peripheral ICs

Image shown is a representation only.

Manufacturer	Texas Instruments
Manufacturer's Part Number	MSP430C1101IPWR
Description	Microcontrollers; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 20; Package Code: TSSOP; Package Shape: RECTANGULAR;
Datasheet	MSP430C1101IPWR Datasheet
In Stock	534

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Sub-Category:	Microcontrollers
Surface Mount:	YES
Maximum Supply Current:	.3 mA
No. of Terminals:	20
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Technology:	CMOS
JESD-30 Code:	R-PDSO-G20
Package Shape:	RECTANGULAR
ROM Words:	1024
Terminal Form:	GULL WING
Maximum Operating Temperature:	85 Cel
Package Code:	TSSOP
Speed:	8 rpm
RAM Bytes:	128
Bit Size:	16
Minimum Operating Temperature:	-40 Cel
Qualification:	Not Qualified
Package Equivalence Code:	TSSOP20,.25
ROM Programmability:	MROM
Terminal Pitch:	.635 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	2/3.3
CPU Family:	MSP430

Pricing (USD)

Qty.	Unit Price	Ext. Price
534	-	-

MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;

LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.

BSS138LT3G by Onsemi is a N-CHANNEL FET with a min DS breakdown voltage of 50V. It is used for switching applications and has a max drain current of 0.2A and max drain-source on resistance of 3.5 ohm.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;