PTB48540AAH by Texas Instruments | Other Function Semiconductors

Image shown is a representation only.

Manufacturer	Texas Instruments
Manufacturer's Part Number	PTB48540AAH
Description	DC-DC REGULATED POWER SUPPLY MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 13; Package Shape: RECTANGULAR; Surface Mount: NO; Nominal Input Voltage: 36 V;
Datasheet	PTB48540AAH Datasheet
In Stock	3,376

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Nominal Output Voltage:	5 V
Trim or Adjustable Output (V):	YES
Maximum Total Power Output:	10 W
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Outputs:	1
No. of Terminals:	13
Terminal Position:	DUAL
Package Style (Meter):	MICROELECTRONIC ASSEMBLY
Technology:	HYBRID
JESD-30 Code:	R-XDMA-P13
Package Shape:	RECTANGULAR
Terminal Form:	PIN/PEG
Maximum Operating Temperature:	85 Cel
Minimum Output Voltage:	4.5 V
Minimum Input Voltage:	48 V
Maximum Input Voltage:	57 V
Maximum Output Voltage:	5.5 V
JESD-609 Code:	e3
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Qualification:	Not Qualified
Nominal Input Voltage:	36 V
Other IC type:	DC-DC REGULATED POWER SUPPLY MODULE
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,376	$50.330	$169,914.080

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .225 W; Maximum Drain-Source On Resistance: 7.5 ohm; Transistor Element Material: SILICON;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.