Texas Instruments - Q2T2905

  1. Home
  2. Texas Instruments - Q2T2905
Q2T2905 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number Q2T2905
Description PNP; Configuration: SEPARATE, 4 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet Q2T2905 Datasheet
In Stock996
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .6 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 4 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 50
No. of Terminals: 14
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T14
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
996 - -

Popular Products

Category Top Products

ULN2803LW by Sanken Electric

ULN2803LW

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING; Terminal Position: DUAL;
FZT851TA by Diodes Incorporated

FZT851TA

Diodes Incorporated

FZT851TA by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 6A IC, and 3W Ptot. Ideal for switching applications, it has hFE of min. 100 and fT of 130MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.
BDX53C by Motorola

BDX53C

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Additional Features: LEADFORM OPTIONS ARE AVAILABLE; Maximum Collector-Base Capacitance: 300 pF;
TIP122 by Rectron

TIP122

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
TIP110 by Fairchild Semiconductor

TIP110

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;
MJD127G by Changzhou Galaxy Century Microelectronics

MJD127G

Changzhou Galaxy Century Microelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
TIP29C by Power Innovations

TIP29C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1 A; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON;
TIP35C by Onsemi

TIP35C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP31C by Changzhou Galaxy Century Microelectronics

TIP31C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Style (Meter): FLANGE MOUNT;
2N3055 by Central Semiconductor

2N3055

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3055 by Texas Instruments

2N3055

Texas Instruments

2N3055 by Texas Instruments is a NPN BJT transistor with 60V VCE, 15A IC, and 115W power dissipation. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 200°C with a transition frequency of 2.5MHz.
JAN2N3055 by Api Technologies

JAN2N3055

Api Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3055 by International Devices

2N3055

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD140 by Baneasa S A

BD140

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: SINGLE;
TIP112 by Diotec Semiconductor Ag

TIP112

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;
BDW93C by Fairchild Semiconductor

BDW93C

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Style (Meter): FLANGE MOUNT;
TIP50 by Nte Electronics

TIP50

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP3055 by New Jersey Semiconductor Products

TIP3055

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT;
MJE3055T by General Transistor

MJE3055T

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP111 by Semiconductors

TIP111

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;