SMJ32020FDL by Texas Instruments | Peripheral ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	SMJ32020FDL
Description	DIGITAL SIGNAL PROCESSOR, OTHER; Temperature Grade: COMMERCIAL; Terminal Form: NO LEAD; No. of Terminals: 68; Package Code: QCCN; Package Shape: SQUARE;
Datasheet	SMJ32020FDL Datasheet
In Stock	1,040

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Nominal Supply Voltage:	5 V
Maximum Seated Height:	3.05 mm
Surface Mount:	YES
No. of Terminals:	68
Terminal Position:	QUAD
Format:	FIXED POINT
Package Style (Meter):	CHIP CARRIER
Address Bus Width:	16
Technology:	NMOS
JESD-30 Code:	S-CQCC-N68
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	70 Cel
Package Code:	QCCN
Width:	24.13 mm
Peripheral IC Type:	DIGITAL SIGNAL PROCESSOR, OTHER
Low Power Mode:	NO
Boundary Scan:	NO
External Data Bus Width:	16
Barrel Shifter:	YES
Minimum Operating Temperature:	0 Cel
Qualification:	Not Qualified
Length:	24.13 mm
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,040	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Body Depth: .375 inch;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.