Texas Instruments - SMJ4C1027-12HJ

  1. Home
  2. Texas Instruments - SMJ4C1027-12HJ
SMJ4C1027-12HJ by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number SMJ4C1027-12HJ
Description DRAMs;
Datasheet SMJ4C1027-12HJ Datasheet
In Stock870
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
870 - -

Popular Products

Category Top Products

K4S641632K-UC75 by Samsung

K4S641632K-UC75

Samsung

Samsung's K4S641632K-UC75 is a 4MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. Package style: small outline, thin profile, suitable for commercial temperature grade environments.
IS43TR16128DL-107MBL by Integrated Silicon Solution

IS43TR16128DL-107MBL

Integrated Silicon Solution

IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
MT41K256M16HA-125IT by Micron Technology

MT41K256M16HA-125IT

Micron Technology

Micron Technology's MT41K256M16HA-125IT is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.
W631GG6NB-09 by Winbond Electronics

W631GG6NB-09

Winbond Electronics

Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.
MT41K128M16JT-125:K by Micron Technology

MT41K128M16JT-125:K

Micron Technology

MT41K128M16JT-125:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes 195 mA max supply current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT48LC8M16A2P-6A:LTR by Micron Technology

MT48LC8M16A2P-6A:LTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:LTR is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers 5.4ns max access time and features self-refresh capability. Ideal for commercial applications requiring fast and reliable memory performance in a compact small outline package.
MT53E2G32D4DT-046AAT:A by Micron Technology

MT53E2G32D4DT-046AAT:A

Micron Technology

LPDDR4 DRAM;
MT40A1G8WE-075EIT:B by Micron Technology

MT40A1G8WE-075EIT:B

Micron Technology

Micron Technology's MT40A1G8WE-075EIT:B is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.
MT41K64M16TW-107:J by Micron Technology

MT41K64M16TW-107:J

Micron Technology

MT41K64M16TW-107:J by Micron Technology is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA. Ideal for applications requiring high-speed synchronous memory with low power consumption.
MT48LC8M16A2P-6AAIT:L by Micron Technology

MT48LC8M16A2P-6AAIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AAIT:L is a 8MX16 Synchronous DRAM with 8388608 words, 134217728 bit memory density, and operates at 3.3V. It features self-refresh mode, industrial temperature grade, and is suitable for applications requiring fast access time and high memory capacity.
MT46H64M16LFBF-5AIT:B by Micron Technology

MT46H64M16LFBF-5AIT:B

Micron Technology

Micron Technology's MT46H64M16LFBF-5AIT:B is a 64MX16 DDR1 DRAM with 67108864 words. It operates at 200 MHz, has a memory density of 1073741824 bit, and supports a max clock frequency of 200 MHz. Ideal for industrial applications requiring fast data access and high memory capacity.
MT40A256M16LY-062EAAT:FTR by Micron Technology

MT40A256M16LY-062EAAT:FTR

Micron Technology

Micron Technology's MT40A256M16LY-062EAAT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
HYB25D512160BE-6 by Qimonda Ag

HYB25D512160BE-6

Qimonda Ag

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MTA9ADF1G72AZ-3G2E1 by Micron Technology

MTA9ADF1G72AZ-3G2E1

Micron Technology

Micron Technology's MTA9ADF1G72AZ-3G2E1 is a 1GX72 DDR DRAM MODULE with 1073741824 words and 77309411328 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in microelectronic assemblies.
MT40A1G8WE-083EAIT:BTR by Micron Technology

MT40A1G8WE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAIT:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory performance in automotive electronics and industrial environments.
MT48LC16M16A2P-6A:DTR by Micron Technology

MT48LC16M16A2P-6A:DTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6A:DTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and operates at 3.3V. It features SYNCHRONOUS operation mode, SELF REFRESH capability, and FOUR BANK PAGE BURST access mode. Ideal for commercial applications requiring fast data processing in compact systems.
M471B5173QH0-YK0 by Samsung

M471B5173QH0-YK0

Samsung

Samsung M471B5173QH0-YK0 DDR DRAM Module features 512MX64 organization, 1.35V nominal voltage, and 512M words code. Ideal for applications requiring high memory density and single bank page burst access mode in microelectronic assemblies.
MT47H64M16HR-25EIT:HTR by Micron Technology

MT47H64M16HR-25EIT:HTR

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.4ns, and multi-bank page burst access mode.
IS42S16160G-7BLI by Integrated Silicon Solution

IS42S16160G-7BLI

Integrated Silicon Solution

IS42S16160G-7BLI by Integrated Silicon Solution is a 16MX16 SYNCHRONOUS DRAM with 143 MHz clock frequency. It operates at 3.3V, has 54 terminals in a GRID ARRAY package style, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high-speed memory performance.
IS43LR32160C-6BLI by Integrated Silicon Solution

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.