SMV512K32HFG/EM by Texas Instruments | Memory ICs

Image shown is a representation only.

Manufacturer	Texas Instruments
Manufacturer's Part Number	SMV512K32HFG/EM
Description	STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 76; Package Code: GQFF; Package Shape: RECTANGULAR; No. of Words: 524288 words;
Datasheet	SMV512K32HFG/EM Datasheet
In Stock	976

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Standby Current:	.00033 Amp
Organization:	512KX32
Output Characteristics:	3-STATE
Maximum Seated Height:	2.67 mm
Minimum Supply Voltage (Vsup):	3 V
Surface Mount:	YES
Maximum Supply Current:	635 mA
Terminal Finish:	Gold (Au)
No. of Terminals:	76
Maximum Clock Frequency (fCLK):	22 MHz
No. of Words:	524288 words
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK, GUARD RING
Technology:	CMOS
JESD-30 Code:	R-CQFP-F76
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	125 Cel
Package Code:	GQFF
Width:	20.462 mm
Input/Output Type:	COMMON
No. of Ports:	1
Memory Density:	16777216 bit
Memory IC Type:	STANDARD SRAM
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Memory Width:	32
Output Enable:	YES
No. of Functions:	1
Length:	25.312 mm
Maximum Access Time:	20 ns
No. of Words Code:	512K
Nominal Supply Voltage / Vsup (V):	1.8
Parallel or Serial:	PARALLEL
Terminal Pitch:	.635 mm
Temperature Grade:	MILITARY
Maximum Supply Voltage (Vsup):	3.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
976	-	-

2N7002,215 by NXP Semiconductors is a small signal N-CHANNEL FET with a min DS breakdown voltage of 60V and max drain current of 0.3A. It is used for switching applications in enhancement mode, operates b/w -65 to 150 °C, and has a max power dissipation of 0.2W.

LM107H by Linear Technology is an Operational Amplifier with a max input offset voltage of 3000uV, common mode reject ratio of 96dB, and min voltage gain of 50000. It is used in military applications due to its MILITARY temperature grade and BIPOLAR technology for precise signal processing in harsh environments.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;