SN74LS219N1 by Texas Instruments | Memory ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	SN74LS219N1
Description	STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Package Equivalence Code: DIP16,.3;
Datasheet	SN74LS219N1 Datasheet
In Stock	3,380

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	16X4
Output Characteristics:	3-STATE
Sub-Category:	SRAMs
Surface Mount:	NO
No. of Terminals:	16
No. of Words:	16 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	TTL
JESD-30 Code:	R-PDIP-T16
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	DIP
Memory IC Type:	STANDARD SRAM
Minimum Operating Temperature:	0 Cel
Memory Width:	4
Qualification:	Not Qualified
Package Equivalence Code:	DIP16,.3
No. of Words Code:	16
Parallel or Serial:	PARALLEL
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,380	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.