SN75240PE4 by Texas Instruments | Diodes

Image shown is a representation only.

Manufacturer	Texas Instruments
Manufacturer's Part Number	SN75240PE4
Description	TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Surface Mount: NO; Package Shape: RECTANGULAR;
Datasheet	SN75240PE4 Datasheet
In Stock	154

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Config:	COMPLEX
Diode Type:	TRANS VOLTAGE SUPPRESSOR DIODE
Sub-Category:	Transient Suppressors
Surface Mount:	NO
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Maximum Non Repetitive Peak Reverse Power Dissipation:	60 W
Technology:	AVALANCHE
JESD-30 Code:	R-PDIP-T8
Minimum Breakdown Voltage:	6.5 V
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Polarity:	UNIDIRECTIONAL
Maximum Breakdown Voltage:	8 V
Maximum Repetitive Peak Reverse Voltage:	6 V
JEDEC-95 Code:	MS-001BA
JESD-609 Code:	e4
Diode Element Material:	SILICON
Qualification:	Not Qualified
Nominal Breakdown Voltage:	7 V
Maximum Power Dissipation:	1.15 W
Additional Features:	LOW CAPACITANCE

Pricing (USD)

Qty.	Unit Price	Ext. Price
154	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MBR0540T1G by Onsemi is a Schottky rectifier diode with max. forward voltage of 0.62V and max. output current of 0.5A, ideal for applications requiring high efficiency power conversion in small outline packages. Operating temp range: -55 to 150°C, with peak reflow temp at 260°C, making it suitable for various electronic devices needing reliable rectification performance in compact designs.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;

06035C104KAT2A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for SMT applications requiring compact size and reliable performance in various electronic circuits.

SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 7.5 ohm; Maximum Drain Current (Abs) (ID): .115 A;