Texas Instruments - SN75465N-00

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SN75465N-00 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number SN75465N-00
Description Power Bipolar Transistors;
Datasheet SN75465N-00 Datasheet
In Stock2,576
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BD138 by Baneasa S A

BD138

Baneasa S A

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 1 A; Terminal Form: THROUGH-HOLE;
JANTXV2N3055 by Microchip Technology

JANTXV2N3055

Microchip Technology

JANTXV2N3055 by Microchip Tech is a NPN BJT with 115W power dissipation, 70V max collector-emitter voltage, and 15A max collector current. Ideal for high-power applications in military electronics due to MIL-19500/407D standard compliance and flange mount package style.
BCX5316TA by Diodes Incorporated

BCX5316TA

Diodes Incorporated

BCX5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has VCEsat of 0.5V, hFE of 100, and max IC of 1A. With a max operating temp of 150°C, it's ideal for power management in compact electronic devices.
JANTXV2N3055 by New England Semiconductor

JANTXV2N3055

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; Qualification: Not Qualified;
ULN2803A by Rochester Electronics

ULN2803A

Rochester Electronics

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Additional Features: LOGIC LEVEL COMPATIBLE; Qualification: Not Qualified;
TIP29C by New Jersey Semiconductor Products

TIP29C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 100 V;
BD138 by Crimson Semiconductor

BD138

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
MJD31CT4 by Motorola

MJD31CT4

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER;
TIP120 by Inchange Semiconductor

TIP120

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
TIP122 by Crimson Semiconductor

TIP122

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;
TIP122 by SPC TECHNOLOGY/ MULTICOMP

TIP122

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3;
TIP110 by Fairchild Semiconductor

TIP110

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;
2N2920A by Central Semiconductor

2N2920A

Central Semiconductor

Power Bipolar Transistors; Qualification: Not Qualified; JESD-609 Code: e0; Terminal Finish: TIN LEAD;
TIP120 by Toshiba

TIP120

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Qualification: Not Qualified;
TIP120 by Power Innovations

TIP120

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
MJE3055T by Inchange Semiconductor

MJE3055T

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
2N3055 by Crimson Semiconductor

2N3055

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N2907A by Central Semiconductor

2N2907A

Central Semiconductor

Power Bipolar Transistors; Terminal Finish: TIN LEAD; JESD-609 Code: e0; Qualification: Not Qualified;
D44H11G by Onsemi

D44H11G

Onsemi

D44H11G by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 10A. It is commonly used for switching applications due to its high power dissipation of 50W and low min DC current gain (hFE) of 40.
D44H8 by Onsemi

D44H8

Onsemi

D44H8 by Onsemi is a NPN Power BJT with 60V VCE, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. Its through-hole package makes it suitable for various electronic designs.