Texas Instruments - SN75466N-00

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SN75466N-00 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number SN75466N-00
Description Power Bipolar Transistors;
Datasheet SN75466N-00 Datasheet
In Stock3,221
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Popular Products

Category Top Products

TIP29C by Semiconductors

TIP29C

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
FZT857TA by Diodes Incorporated

FZT857TA

Diodes Incorporated

FZT857TA by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 300V, max. collector current of 3.5A, and min. DC current gain of 100 hFE. Ideal for switching applications, it operates b/w -55 to 150°C and has a transition frequency of 80MHz in a small outline package shape.
TIP111G by Onsemi

TIP111G

Onsemi

TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
D44H11 by Fairchild Semiconductor

D44H11

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BUT30V by STMicroelectronics

BUT30V

STMicroelectronics

STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.
NJVMJD44H11G by Onsemi

NJVMJD44H11G

Onsemi

NJVMJD44H11G by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of min. 40 and operates up to 150°C. Suitable for surface mount designs in automotive electronics (AEC-Q101 compliant).
D44H11 by National Semiconductor

D44H11

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP125 by Transys Electronics

TIP125

Transys Electronics

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
2SC5200OTU by Onsemi

2SC5200OTU

Onsemi

2SC5200OTU by Onsemi is a NPN power BJT with max. collector-emitter voltage of 250V, max. collector current of 17A, and max. power dissipation of 150W. Ideal for amplifier applications due to its single configuration and silicon transistor element material.
TIP120 by Swampscott Electronics

TIP120

Swampscott Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Body Material: PLASTIC/EPOXY;
2N3055H by Onsemi

2N3055H

Onsemi

The Onsemi 2N3055H is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.
2N2905A by General Transistor

2N2905A

General Transistor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
TIP125 by NXP Semiconductors

TIP125

NXP Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 60 V; No. of Elements: 1;
TIP29C by SPC TECHNOLOGY/ MULTICOMP

TIP29C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 1 A; Maximum Collector-Emitter Voltage: 100 V;
MJD31CT4 by Motorola

MJD31CT4

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER;
BCP56-16T1G by Onsemi

BCP56-16T1G

Onsemi

BCP56-16T1G by Onsemi is a NPN Power BJT with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. With a max operating temp of 150°C and hFE of 100, it offers high performance in a compact design.
BD243C by Continental Device India

BD243C

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP32C by Central Semiconductor

TIP32C

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP142 by Power Innovations

TIP142

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; No. of Terminals: 3; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;
2N3055 by Micro Commercial Components

2N3055

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 10 A; Package Body Material: METAL;