Texas Instruments - SN75467N-00

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SN75467N-00 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number SN75467N-00
Description Power Bipolar Transistors;
Datasheet SN75467N-00 Datasheet
In Stock4,093
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TIP50 by Fairchild Semiconductor

TIP50

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP31C by SPC TECHNOLOGY/ MULTICOMP

TIP31C

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BDX53C by Onsemi

BDX53C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR;
BDW93C by Central Semiconductor

BDW93C

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Terminal Finish: Tin/Lead (Sn/Pb);
BD14010STU by Onsemi

BD14010STU

Onsemi

BD14010STU by Onsemi is a PNP BJT transistor with 80V VCEO, 1.5A IC, and 12.5W power dissipation. Ideal for switching applications, it has a hFE of 63 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
TIP125 by Tt Electronics Plc

TIP125

Tt Electronics Plc

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
TIP142 by Nte Electronics

TIP142

Nte Electronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;
TIP111 by STMicroelectronics

TIP111

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
TIP31C by Kec

TIP31C

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP122 by Weitron Technology

TIP122

Weitron Technology

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
TIP127 by New Jersey Semiconductor Products

TIP127

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 1000; Transistor Element Material: SILICON;
TIP32C by Kec

TIP32C

Kec

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Terminal Position: SINGLE;
TIP35C by Onsemi

TIP35C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP41C by Semiconductors

TIP41C

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N3055 by Microchip Technology

2N3055

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 117 W; Maximum Collector Current (IC): 15 A;
2SC5200 by STMicroelectronics

2SC5200

STMicroelectronics

2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.
BDW93C by Crimson Semiconductor

BDW93C

Crimson Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE;
BD1396STU by Onsemi

BD1396STU

Onsemi

BD1396STU by Onsemi is a NPN BJT transistor with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 40 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
TIP116G by Onsemi

TIP116G

Onsemi

TIP116G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max operating temperature of 150°C, and min DC current gain of 500 (hFE). The package style is flange mount with through-hole terminals.
TIP117 by General Transistor

TIP117

General Transistor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;