Texas Instruments - SN75469N-00

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SN75469N-00 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number SN75469N-00
Description Power Bipolar Transistors;
Datasheet SN75469N-00 Datasheet
In Stock1,404
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Popular Products

Category Top Products

TIP147 by Nte Electronics

TIP147

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT;
D44H11 by STMicroelectronics

D44H11

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
TIP117 by Nte Electronics

TIP117

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; No. of Terminals: 3;
BD139-10 by Continental Device India

BD139-10

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP122 by STMicroelectronics

TIP122

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
TIP127 by Bourns

TIP127

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
MJD45H11T4G by Onsemi

MJD45H11T4G

Onsemi

MJD45H11T4G by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 80V and a max collector current of 8A. It is commonly used for switching applications due to its high power dissipation of 20W and small outline package style.
BDX53C by Mospec Semiconductor

BDX53C

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP127 by Continental Device India

TIP127

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
TIP42C by Weitron Technology

TIP42C

Weitron Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; No. of Terminals: 3;
TIP112 by Inchange Semiconductor

TIP112

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Transistor Element Material: SILICON;
TIP117 by Continental Device India

TIP117

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;
BD140 by Motorola

BD140

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
BD138 by NXP Semiconductors

BD138

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP142 by New Jersey Semiconductor Products

TIP142

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 500;
TIP120 by Semitronics

TIP120

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
BDW93C by Samsung

BDW93C

Samsung

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY;
TIP112 by Kec

TIP112

Kec

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V;
ZTX851 by Diodes Incorporated

ZTX851

Diodes Incorporated

ZTX851 by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 60V, max. collector current of 5A, and min. DC current gain of 100. It is used in power applications where high switching speeds up to 130MHz are required, operating at temperatures up to 200°C for efficient performance.
TIP42CG by Onsemi

TIP42CG

Onsemi

TIP42CG by Onsemi is a PNP power bipolar junction transistor with a max collector-emitter voltage of 100V and a max collector current of 6A. It is commonly used for switching applications due to its high power dissipation of 65W and low min DC current gain (hFE) of 15.