Texas Instruments - SN75469N-10

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SN75469N-10 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number SN75469N-10
Description Power Bipolar Transistors;
Datasheet SN75469N-10 Datasheet
In Stock3,713
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Popular Products

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BDX53C by Power Innovations

BDX53C

Power Innovations

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
TIP112 by Semiconductors

TIP112

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JEDEC-95 Code: TO-220AB;
MJD340T4 by STMicroelectronics

MJD340T4

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): .5 A; Terminal Position: SINGLE;
TIP127 by Microsemi

TIP127

Microsemi

PNP; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-609 Code: e0;
TIP127 by Bourns

TIP127

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Form: THROUGH-HOLE;
TIP3055 by SPC TECHNOLOGY/ MULTICOMP

TIP3055

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON;
TIP127 by SPC TECHNOLOGY/ MULTICOMP

TIP127

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR;
BD139 by Motorola

BD139

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Transistor Application: AMPLIFIER; Maximum VCEsat: .5 V;
BD13910STU by Fairchild Semiconductor

BD13910STU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
ULN2804APG by Toshiba

ULN2804APG

Toshiba

Toshiba's ULN2804APG is an 8-bank NPN Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a min DC current gain of 1000x, it can handle up to 0.5A collector current at 50V collector-emitter voltage. This through-hole package with 18 terminals is made of silicon material in a rectangular shape.
TIP31C by New Jersey Semiconductor Products

TIP31C

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 3 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 100 V; Transistor Element Material: SILICON;
TIP31C by Micro Commercial Components

TIP31C

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;
TIP41C by Forward International Electronics

TIP41C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP47 by General Transistor

TIP47

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
TIP110 by Semiconductors

TIP110

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
TIP142T by Mospec Semiconductor

TIP142T

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;
NJVMJD31CT4G-VF01 by Onsemi

NJVMJD31CT4G-VF01

Onsemi

NJVMJD31CT4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 10, VCEO of 100V, and IC of 3A. Ideal for amplifier applications, it operates b/w -65 to 150°C and has a transition frequency of 3MHz. Suitable for surface mount designs in automotive electronics per AEC-Q101 standard.
TIP112 by Onsemi

TIP112

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
BD139 by Crimson Semiconductor

BD139

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N3055 by Space Power Electronics

2N3055

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;