SNJ54HC604J by Texas Instruments | Logic ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	SNJ54HC604J
Description	MULTIPLEXER; Temperature Grade: MILITARY; Terminal Form: THROUGH-HOLE; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR;
Datasheet	SNJ54HC604J Datasheet
In Stock	4,059

NAME	DESCRIPTION
Package Body Material:	CERAMIC
Output Characteristics:	3-STATE
No. of Inputs:	2
Sub-Category:	Multiplexer/Demultiplexers
Surface Mount:	NO
Logic IC Type:	MULTIPLEXER
Minimum Operating Temperature:	-55 Cel
No. of Functions:	8
No. of Terminals:	28
Qualification:	Not Qualified
Package Equivalence Code:	DIP28,.6
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Screening Level:	38535Q/M;38534H;883B
Technology:	CMOS
JESD-30 Code:	R-XDIP-T28
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	125 Cel
Package Code:	DIP
Terminal Pitch:	2.54 mm
Temperature Grade:	MILITARY

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,059	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;

CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.

Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Matte Tin (Sn) - annealed; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Minimum DC Current Gain (hFE): 100; Maximum Turn On Time (ton): 35 ns;

FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Forward Voltage (VF): 1 V; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Output Current: .15 A;