TAS5121DKDR by Texas Instruments | General Purpose ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TAS5121DKDR
Description	AUDIO AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 36; Package Code: HSSOP; Package Shape: RECTANGULAR;
Datasheet	TAS5121DKDR Datasheet
In Stock	2,092

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Seated Height:	3.6 mm
Minimum Supply Voltage (Vsup):	3 V
Sub-Category:	Audio/Video Amplifiers
Surface Mount:	YES
No. of Terminals:	36
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, HEAT SINK/SLUG, SHRINK PITCH
JESD-30 Code:	R-PDSO-G36
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	70 Cel
No. of Channels:	2
Package Code:	HSSOP
General IC Type:	AUDIO AMPLIFIER
Nominal Bandwidth:	.02 kHz
Width:	11 mm
Other Names:	2156-TAS5121DKDR-TITR TEXTISTAS5121DKDR
Harmonic Distortion:	10 %
Minimum Operating Temperature:	0 Cel
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	SSOP36,.56
Nominal Output Power:	100 W
Length:	15.9 mm
Additional Features:	IT ALSO REQUIRES 10.8V TO 13.2V SUPPLY
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	.65 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	3.6 V
Power Supplies (V):	3.3,12

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,092	$2.990	$6,255.080

FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

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TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Package Body Material: PLASTIC/EPOXY; Maximum Load Regulation: .05 %;