THS4275DRBTG4 by Texas Instruments | General Purpose ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	THS4275DRBTG4
Description	VIDEO PREAMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 8; Package Code: HVSON; Package Shape: SQUARE;
Datasheet	THS4275DRBTG4 Datasheet
In Stock	3,158

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Maximum Seated Height:	1 mm
Minimum Supply Voltage (Vsup):	2.5 V
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
JESD-30 Code:	S-PDSO-N8
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	85 Cel
No. of Channels:	1
Package Code:	HVSON
General IC Type:	VIDEO PREAMPLIFIER
Width:	3 mm
Moisture Sensitivity Level (MSL):	2
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Qualification:	Not Qualified
Length:	3 mm
Additional Features:	IT CAN ALSO OPERATE WITH 5V TO 15 V SINGLE SUPPLY
Peak Reflow Temperature (C):	260
Terminal Pitch:	.65 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	7.5 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,158	-	-

MBR0530T1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.375V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring high-speed switching in compact electronic devices like smartphones and tablets. The package style is small outline with gull wing terminals for surface mount assembly.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .115 A; Maximum Drain-Source On Resistance: 7.5 ohm;