Texas Instruments - TIED86

  1. Home
  2. Texas Instruments - TIED86
TIED86 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TIED86
Description AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Silicon; Maximum Operating Temperature: 125 Cel; Maximum Reverse Voltage: 120 V; Maximum Dark Current: .15 nA;
In Stock2,531
NAME DESCRIPTION
Maximum Dark Current: .15 nA
Optoelectronic Type: AVALANCHE PHOTODIODE
Maximum Operating Temperature: 125 Cel
Maximum Reverse Voltage: 120 V
Semiconductor Material: Silicon
Sub-Category: Photo Diodes
Minimum Operating Temperature: -60 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,531 - -

Popular Products

Category Top Products

MICROFC-SMTPA-30020-GEVB by Onsemi

MICROFC-SMTPA-30020-GEVB

Onsemi

AVALANCHE PHOTODIODE;
BPW34FSR18R by Osram Opto Semiconductors

BPW34FSR18R

Osram Opto Semiconductors

Osram Opto Semiconductors' BPW34FSR18R is a single PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has a min reverse breakdown voltage of 16V, and nominal light current of 0.04mA. Ideal for applications requiring infrared detection in compact spaces.
SFH212 by Infineon Technologies

SFH212

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Minimum Operating Temperature: -40 Cel; Maximum Reverse Voltage: 7 V;
MICROFJ-SMTPA-30035-GEVB by Onsemi

MICROFJ-SMTPA-30035-GEVB

Onsemi

AVALANCHE PHOTODIODE;
MICRORB-SMPTA-10010-GEVB-PK by Onsemi

MICRORB-SMPTA-10010-GEVB-PK

Onsemi

Photo Diodes;
QSB34GR by Fairchild Semiconductor

QSB34GR

Fairchild Semiconductor

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Reverse Breakdown Voltage: 32 V; Minimum Operating Temperature: -25 Cel; Maximum Reverse Voltage: 32 V;
HSDL-5400#1L1 by Broadcom

HSDL-5400#1L1

Broadcom

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Infrared (IR) Range: YES; Nominal Light Current: .0016 mA; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel;
TPS706 by Toshiba

TPS706

Toshiba

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000001 s; Configuration: SINGLE; JESD-609 Code: e0;
BPV10NF by Temic Semiconductors

BPV10NF

Temic Semiconductors

PIN PHOTODIODE; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; No. of Functions: 1; Peak Wavelength (nm): 940; Maximum Dark Current: 5 nA;
SPD2025-GP by Broadcom

SPD2025-GP

Broadcom

Photo Diodes;
MICROFC-30050-SMT-TR by Onsemi

MICROFC-30050-SMT-TR

Onsemi

MICROFC-30050-SMT-TR by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has min reverse breakdown voltage of 24.2V, and max dark current of 914nA. Ideal for optoelectronic applications requiring surface mount configuration.
SFH250 by Osram Opto Semiconductors

SFH250

Osram Opto Semiconductors

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Maximum Reverse Voltage: 30 V; Minimum Operating Temperature: -50 Cel; Semiconductor Material: Silicon;
NDL5131P1D by Renesas Electronics

NDL5131P1D

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 45 V; Semiconductor Material: Germanium; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;
HSDL-5400-OPTION-011 by Broadcom

HSDL-5400-OPTION-011

Broadcom

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Maximum Dark Current: 5 nA; Infrared (IR) Range: YES; Size: 1.53 mm; Minimum Reverse Breakdown Voltage: 40 V;
SFH2325 by Infineon Technologies

SFH2325

Infineon Technologies

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 200 nA; Semiconductor Material: Germanium;
KOM2033B by Infineon Technologies

KOM2033B

Infineon Technologies

Photo Diodes; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: .001 nA; Infrared (IR) Range: YES; Peak Wavelength (nm): 870; Minimum Reverse Breakdown Voltage: 20 V;
S38 by Luna Innovations

S38

Luna Innovations

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 180 V; Maximum Response Time: .000000005 s; Maximum Dark Current: 100 nA;
MICRORB-SMA-10010-GEVB-PK by Onsemi

MICRORB-SMA-10010-GEVB-PK

Onsemi

Photo Diodes;
MICROFC-30050-SMT-TR1 by Onsemi

MICROFC-30050-SMT-TR1

Onsemi

MICROFC-30050-SMT-TR1 by Onsemi is a 3mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40 °C to 85°C, has a min reverse breakdown voltage of 24.2V, and max dark current of 914nA. Ideal for optoelectronic applications requiring surface mount configuration.
MICROFR-10020-MLP-TA by Onsemi

MICROFR-10020-MLP-TA

Onsemi

MICROFR-10020-MLP-TA by Onsemi is a single avalanche photodiode with a peak wavelength of 635nm. It operates b/w -40 to 85 °C, has a min reverse breakdown voltage of 24.25V, and max dark current of 25nA. Ideal for surface mount applications in optoelectronics.