Texas Instruments - TIL180

  1. Home
  2. Texas Instruments - TIL180
TIL180 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TIL180
Description Photo Transistors; Maximum Response Time: .000125 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 70 Cel; Maximum On State Current: .0001 A; Maximum Power Dissipation: .09 W;
In Stock720
NAME DESCRIPTION
Maximum Power Dissipation: .09 W
Maximum Response Time: .000125 s
Maximum Operating Temperature: 70 Cel
Sub-Category: Photo Transistors
Minimum Operating Temperature: -40 Cel
Maximum On State Current: .0001 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
720 - -

Popular Products

Category Top Products

SFH309-3 by Infineon Technologies

SFH309-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 200 nA;
SFH3401-2 by Infineon Technologies

SFH3401-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1080;
QSE113E3R0 by Onsemi

QSE113E3R0

Onsemi

QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.
HLPT-B5K0-00000 by Broadcom

HLPT-B5K0-00000

Broadcom

PHOTO TRANSISTOR;
SFH313FA by Siemens

SFH313FA

Siemens

PHOTO TRANSISTOR; Additional Features: DAYLIGHT FILTER; Infrared (IR) Range: YES; Minimum Operating Temperature: -55 Cel; Size: 5 mm; No. of Functions: 1;
TIL625 by Texas Instruments

TIL625

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel;
BPT-BP1A34 by Yellow Stone

BPT-BP1A34

Yellow Stone

PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Shape: ROUND; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
TPS616-C by Toshiba

TPS616-C

Toshiba

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Minimum Collector-emitter Breakdown Voltage: 30 V; Nominal Light Current: .03 mA; Maximum Operating Temperature: 85 Cel;
SFH303FA by Infineon Technologies

SFH303FA

Infineon Technologies

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Infrared (IR) Range: YES; No. of Functions: 1; Minimum Operating Temperature: -40 Cel;
SFH309FA by Osram Opto Semiconductors

SFH309FA

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: BRIGHT TIN OVER NICKEL; Nominal Light Current: .4 mA; Maximum Power Dissipation: .165 W; JESD-609 Code: e3;
BPY62-3 by Infineon Technologies

BPY62-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;
TEPT5600 by Vishay Intertechnology

TEPT5600

Vishay Intertechnology

TEPT5600 by Vishay Intertechnology is a 5mm round phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has a collector-emitter breakdown voltage of 6V, and can handle max on state current of 0.02A. Ideal for optoelectronic applications requiring precise light detection in various environments.
TPS601A-C by Toshiba

TPS601A-C

Toshiba

PHOTO TRANSISTOR; Shape: ROUND; Maximum Operating Temperature: 125 Cel; Size: 4.7 mm; Nominal Light Current: .4 mA; Infrared (IR) Range: YES;
LS612 by Texas Instruments

LS612

Texas Instruments

LS612 by Texas Instruments is a single phototransistor with max temp of 125°C. It has nominal light current of 2mA and response time of 0.000008s. Ideal for applications requiring IR detection, it features a min breakdown voltage of 50V and through hole mounting.
ALS-PT19-315C/L177/TR8 by Everlight Electronics

ALS-PT19-315C/L177/TR8

Everlight Electronics

Everlight Electronics' ALS-PT19-315C/L177/TR8 is a 1.2mm RECTANGULAR PHOTO TRANSISTOR with peak wavelength of 630nm. It operates b/w -40°C to 85°C, with light current of 1.52mA and dark current up to 100nA. Ideal for SURFACE MOUNT applications at a supply voltage of 5V.
BPY62-5 by Infineon Technologies

BPY62-5

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; Peak Wavelength (nm): 850; Maximum Response Time: .000009 s;
SPS281C by Onsemi

SPS281C

Onsemi

SPS281C by Onsemi is a PHOTO DARLINGTON phototransistor with peak wavelength of 850nm. It has max power dissipation of 0.05W and response time of 0.00003s. Ideal for applications requiring optoelectronic sensing in temperatures ranging from -25 °C to 80°C.
OP550A by Tt Electronics Plc

OP550A

Tt Electronics Plc

OP550A by Tt Electronics Plc is a single phototransistor with a peak wavelength of 930nm. It operates b/w -40°C to 100°C, has a max power dissipation of 0.1W, and features an infrared range. Ideal for applications requiring precise light detection in compact spaces.
QSB363ZR by Onsemi

QSB363ZR

Onsemi

QSB363ZR by Onsemi is a 1.9mm ROUND PHOTO TRANSISTOR with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and surface mounting feature.
SFH3400-2 by Infineon Technologies

SFH3400-2

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 850; Minimum Operating Temperature: -40 Cel;