Texas Instruments - TIL58

  1. Home
  2. Texas Instruments - TIL58
TIL58 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TIL58
Description Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000002 s; Maximum Power Dissipation: .05 W; Maximum Dark Current: 25 nA;
In Stock1,251
NAME DESCRIPTION
Maximum Dark Current: 25 nA
Maximum Power Dissipation: .05 W
Maximum Response Time: .000002 s
Sub-Category: Photo Transistors
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,251 - -

Popular Products

Category Top Products

QSE114 by Fairchild Semiconductor

QSE114

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Peak Wavelength (nm): 880;
TPS606-B by Toshiba

TPS606-B

Toshiba

PHOTO TRANSISTOR; Nominal Light Current: .01 mA; Configuration: SINGLE; Infrared (IR) Range: NO; No. of Functions: 1; Minimum Operating Temperature: -25 Cel;
TIL135 by Texas Instruments

TIL135

Texas Instruments

TIL135 by Texas Instruments is a phototransistor with 12 separate elements. It operates in temperatures from -65°C to 125°C, with nominal light current of 2mA and max dark current of 100nA. Ideal for applications requiring IR detection and a min collector-emitter breakdown voltage of 50V.
BPY62-3 by Infineon Technologies

BPY62-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;
SFH313FA by Osram Opto Semiconductors

SFH313FA

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Size: 5 mm; Configuration: SINGLE; Minimum Operating Temperature: -40 Cel;
SFH305 by Infineon Technologies

SFH305

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 850; Maximum Power Dissipation: .07 W; Minimum Operating Temperature: -40 Cel;
NTE3122 by Nte Electronics

NTE3122

Nte Electronics

NTE3122 by Nte Electronics is a PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. It operates b/w -25°C to 85°C, has max power dissipation of 0.075W, and max response time of 0.00008s. Ideal for applications requiring IR detection due to its infrared range capability.
SFH313-2 by Infineon Technologies

SFH313-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 850; JESD-609 Code: e0;
QSD123 by Qt Optoelectronics

QSD123

Qt Optoelectronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Size: 5 mm; Maximum Dark Current: 100 nA;
SFH313FA-3 by Siemens

SFH313FA-3

Siemens

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Size: 5 mm; Shape: ROUND; Maximum Dark Current: 200 nA; No. of Functions: 1;
SFH3219-Z by Osram Opto Semiconductors

SFH3219-Z

Osram Opto Semiconductors

SFH3219-Z by Osram Opto Semiconductors is a single phototransistor with a peak wavelength of 990nm. It operates b/w -40°C to 100°C, with a nominal light current of 0.063mA and max dark current of 50nA. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.575mm.
SFH300FA by Siemens

SFH300FA

Siemens

PHOTO TRANSISTOR; Size: 5 mm; Configuration: SINGLE; No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;
ASDL-6770-C22 by Broadcom

ASDL-6770-C22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel; Shape: ROUND;
BPX43-3 by Infineon Technologies

BPX43-3

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; JESD-609 Code: e0; Maximum Dark Current: 300 nA;
LS615 by Texas Instruments

LS615

Texas Instruments

LS615 by Texas Instruments is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.05W. Ideal for applications requiring fast response times and infrared range detection.
QSB363 by Onsemi

QSB363

Onsemi

QSB363 by Onsemi is a single configuration phototransistor with a size of 1.9 mm. It operates at temperatures ranging from -25 to 85 °C and has a peak wavelength of 940 nm. It is commonly used in applications requiring infrared sensing or detection.
TPS615(C,F) by Toshiba

TPS615(C,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; No. of Functions: 1; Infrared (IR) Range: YES; Peak Wavelength (nm): 800;
TPS625(A) by Toshiba

TPS625(A)

Toshiba

PHOTO DARLINGTON; Nominal Light Current: .6 mA; No. of Functions: 1; Shape: ROUND; Configuration: SINGLE; Additional Features: HIGH SENSITIVITY; SIDE VIEW;
QSE113E3R0 by Onsemi

QSE113E3R0

Onsemi

QSE113E3R0 by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 30V. Ideal for optoelectronic applications requiring fast and precise light detection in compact spaces.
SFH310 by Infineon Technologies

SFH310

Infineon Technologies

SFH310 by Infineon Technologies is a phototransistor with peak wavelength of 780nm. It can operate b/w -55°C to 100°C, with max power dissipation of 0.165W and dark current of 5nA. Ideal for applications requiring fast response time (0.000007s) and on-state current up to 0.05A, featuring through-hole mounting.