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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | TIS25 |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-MBCY-W7; Transistor Element Material: SILICON; |
Datasheet | TIS25 Datasheet |
In Stock | 325 |
NAME | DESCRIPTION |
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Package Body Material: | METAL |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SEPARATE, 2 ELEMENTS |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | JUNCTION |
Transistor Application: | SWITCHING |
Sub-Category: | FET General Purpose Small Signal |
Surface Mount: | NO |
No. of Terminals: | 7 |
Maximum Power Dissipation (Abs): | .3 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-MBCY-W7 |
No. of Elements: | 2 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Operating Mode: | DEPLETION MODE |
Maximum Operating Temperature: | 200 Cel |
Case Connection: | ISOLATED |
Maximum Drain-Source On Resistance: | 500 ohm |
Maximum Feedback Capacitance (Crss): | 4 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 50 V |
Qualification: | Not Qualified |
Peak Reflow Temperature (C): | NOT SPECIFIED |