TIS75 by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TIS75
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 60 ohm; Transistor Element Material: SILICON;
Datasheet	TIS75 Datasheet
In Stock	997

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	JUNCTION
Transistor Application:	CHOPPER
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.36 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	60 ohm
Maximum Feedback Capacitance (Crss):	8 pF
JEDEC-95 Code:	TO-18
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
997	-	-

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