TL032IPE4 by Texas Instruments | Amplifiers

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TL032IPE4
Description	OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
Datasheet	TL032IPE4 Datasheet
In Stock	113

NAME	DESCRIPTION
Package Body Material:	Plastic/Epoxy
Low-Bias:	Yes
Maximum Seated Height:	0.2 in (5.08 mm)
Frequency Compensation:	Yes
Maximum Supply Voltage Limit:	18 V
Maximum Bias Current (IIB) @25C:	200 pA
Sub-Category:	Operational Amplifiers
Maximum Supply Current:	560 μA
Surface Mount:	No
Terminal Finish:	Nickel Palladium Gold
No. of Terminals:	8
Minimum Slew Rate:	1.5 V/us
Maximum Input Offset Voltage:	5300 uV
Nominal Unity Gain Bandwidth:	1 MHz
Terminal Position:	Dual
Package Style (Meter):	In Line
Technology:	BIFET
JESD-30 Code:	R-PDIP-T8
Low-Offset:	No
Minimum Voltage Gain:	3000
Package Shape:	Rectangular
Terminal Form:	Through-Hole
Maximum Operating Temperature:	85 °C (185 °F)
Package Code:	DIP
Amplifier Type:	Operational Amplifier
Nominal Slow Rate:	2.3 V/us
Width:	0.3 in (7.62 mm)
Architecture:	Voltage Feedback
Nominal Common Mode Reject Ratio:	87 dB
Packing Method:	Tube
Micropower:	Yes
Nominal Negative Supply Voltage (Vsup):	-5 V
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 °C (-40 °F)
Maximum Average Bias Current (IIB):	900 pA
No. of Functions:	2
Qualification:	No
Package Equivalence Code:	DIP8,.3
Length:	0.386 in (9.81 mm)
Nominal Supply Voltage / Vsup (V):	5 V
Maximum Negative Supply Voltage Limit:	-18 V
Terminal Pitch:	0.1 in (2.54 mm)
Temperature Grade:	Industrial
Power Supplies (V):	±5/±15 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
113	-	-

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;