TL7770-12Y by Texas Instruments | Other Function Semiconductors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TL7770-12Y
Description	POWER SUPPLY SUPPORT CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 16; Package Code: DIE; Package Shape: UNSPECIFIED; Surface Mount: YES;
Datasheet	TL7770-12Y Datasheet
In Stock	3,978

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Minimum Supply Voltage (Vsup):	3.5 V
Maximum Supply Current (Isup):	5 mA
Surface Mount:	YES
Minimum Operating Temperature:	0 Cel
No. of Functions:	1
No. of Terminals:	16
Qualification:	Not Qualified
Terminal Position:	UPPER
Package Style (Meter):	UNCASED CHIP
Other IC type:	POWER SUPPLY SUPPORT CIRCUIT
JESD-30 Code:	X-XUUC-N
Adjustable Threshold:	NO
Package Shape:	UNSPECIFIED
Terminal Form:	NO LEAD
Additional Features:	POWER ON RESET GENERATOR
Maximum Operating Temperature:	70 Cel
No. of Channels:	2
Package Code:	DIE
Nominal Supply Voltage (Vsup):	5 V
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	18 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,978	-	-

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.

MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.

RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 100 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;