Texas Instruments - TM124BBJ32F

  1. Home
  2. Texas Instruments - TM124BBJ32F
TM124BBJ32F by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TM124BBJ32F
Description FAST PAGE DRAM MODULE;
Datasheet TM124BBJ32F Datasheet
In Stock1,041
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,041 - -

Popular Products

Category Top Products

NT5AD512M16A4-HRI by Nanya Technology

NT5AD512M16A4-HRI

Nanya Technology

NT5AD512M16A4-HRI by Nanya Technology is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like servers, PCs, and networking equipment.
MTC8C1084S1SC48BA1 by Micron Technology

MTC8C1084S1SC48BA1

Micron Technology

DDR5 DRAM MODULE;
MT41K128M16HA-15E:D by Micron Technology

MT41K128M16HA-15E:D

Micron Technology

Micron Technology's MT41K128M16HA-15E:D is a DDR3L DRAM with 128MX16 organization, operating at 667 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT42L256M32D4KP-25IT:A by Micron Technology

MT42L256M32D4KP-25IT:A

Micron Technology

Micron Technology's MT42L256M32D4KP-25IT:A is a LPDDR2 DRAM with 256MX32 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT48LC4M32B2P-7:GTR by Micron Technology

MT48LC4M32B2P-7:GTR

Micron Technology

Micron Technology's MT48LC4M32B2P-7:GTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70 °C. It features Self Refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for commercial applications requiring high memory density and synchronous operation.
MT41K64M16TW-107IT:J by Micron Technology

MT41K64M16TW-107IT:J

Micron Technology

Micron Technology's MT41K64M16TW-107IT:J is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA of current. Ideal for applications requiring high-speed synchronous memory with a capacity of 1Gb.
W9825G6JB-6 by Winbond Electronics

W9825G6JB-6

Winbond Electronics

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.
S27KS0642GABHI030 by Cypress Semiconductor

S27KS0642GABHI030

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 25 mA;
EDD5108AGTA-5B-E by Elpida Memory

EDD5108AGTA-5B-E

Elpida Memory

Elpida Memory's EDD5108AGTA-5B-E is a 64MX8 DDR1 DRAM with 67108864 words, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast access times in commercial temperature grades.
KVR1333D3S9/4GKC by Kingston Technology Company

KVR1333D3S9/4GKC

Kingston Technology Company

DDR DRAM MODULE;
MT53D1024M32D4DT-053AAT:D by Micron Technology

MT53D1024M32D4DT-053AAT:D

Micron Technology

Micron's MT53D1024M32D4DT-053AAT:D is a 1GX32 DDR4 DRAM with 32-bit memory width and 34359738368 bit density. It operates synchronously in grid array package style, suitable for high-performance computing applications.
S27KS0642GABHV023 by Infineon Technologies

S27KS0642GABHV023

Infineon Technologies

S27KS0642GABHV023 by Infineon Technologies is a 8MX8 DRAM with 67108864 bit memory density. It operates at 200 MHz clock frequency, featuring synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices due to its very thin profile package style.
MT48LC16M16A2P-7EIT:G by Micron Technology

MT48LC16M16A2P-7EIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features common I/O type, self-refresh mode, and industrial temperature grade. Ideal for applications requiring fast memory access in harsh environments.
MT47H64M16HR-3IT:G by Micron Technology

MT47H64M16HR-3IT:G

Micron Technology

Micron Technology's MT47H64M16HR-3IT:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
KM44C1000BJ-7 by Samsung

KM44C1000BJ-7

Samsung

Samsung's KM44C1000BJ-7 is a 1MX4 DRAM with 1048576 words and 70ns access time. It operates at 5V, has 3-STATE output, and uses FAST PAGE technology. Ideal for commercial applications requiring high memory density and fast data access.
MT61M256M32JE-12AAT:A by Micron Technology

MT61M256M32JE-12AAT:A

Micron Technology

Micron Technology's MT61M256M32JE-12AAT:A is a GDDR6 DRAM with 256MX32 organization, operating at up to 1500 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for high-performance applications requiring fast memory access and data processing.
IS42S16400J-7TL-TR by Integrated Silicon Solution

IS42S16400J-7TL-TR

Integrated Silicon Solution

IS42S16400J-7TL-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and 70°C max temp. Ideal for applications requiring high-speed memory access in commercial-grade devices.
AS4C256M16D3B-12BINTR by Alliance Memory

AS4C256M16D3B-12BINTR

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
KM416C256BJ-7 by Samsung

KM416C256BJ-7

Samsung

Samsung's KM416C256BJ-7 is a 256Kx16 DRAM with 70ns access time and 512 refresh cycles. It operates at 5V, has a small outline package style, and is ideal for fast page access applications in commercial temperature environments.
MT48LC16M16A2P-7EIT:D by Micron Technology

MT48LC16M16A2P-7EIT:D

Micron Technology

Micron Technology's MT48LC16M16A2P-7EIT:D is a 16MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it offers a memory density of 268MB and supports common I/O type with self-refresh capability.