Texas Instruments - TM248NBK36BK36T-70

  1. Home
  2. Texas Instruments - TM248NBK36BK36T-70
TM248NBK36BK36T-70 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TM248NBK36BK36T-70
Description DRAMs;
Datasheet TM248NBK36BK36T-70 Datasheet
In Stock1,514
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,514 - -

Popular Products

Category Top Products

MT53E1G16D1FW-046AIT:A by Micron Technology

MT53E1G16D1FW-046AIT:A

Micron Technology

LPDDR4 DRAM;
EDB8132B4PB-8D-F-R by Micron Technology

EDB8132B4PB-8D-F-R

Micron Technology

Micron Technology's EDB8132B4PB-8D-F-R is a 256MX32 LPDDR2 DRAM with 1.2V supply voltage, synchronous operation, and self-refresh capability. It features a grid array package style with very thin profile and fine pitch, suitable for applications requiring high memory density and single bank page burst access mode.
MT40A256M16LY-075:F by Micron Technology

MT40A256M16LY-075:F

Micron Technology

Micron Technology's MT40A256M16LY-075:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like smartphones and computers.
MT48LC16M16A2P-75IT:DTR by Micron Technology

MT48LC16M16A2P-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2P-75IT:DTR is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz. It features 16777216 words, FOUR BANK PAGE BURST access mode, and supports sequential burst lengths of 1,2,4,8. Ideal for industrial applications requiring high-speed memory performance in a compact form factor.
MT48LC8M16A2P-6A:LTR by Micron Technology

MT48LC8M16A2P-6A:LTR

Micron Technology

Micron Technology's MT48LC8M16A2P-6A:LTR is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers 5.4ns max access time and features self-refresh capability. Ideal for commercial applications requiring fast and reliable memory performance in a compact small outline package.
MT46H256M32L4LE-48WT:C by Micron Technology

MT46H256M32L4LE-48WT:C

Micron Technology

Micron Technology's MT46H256M32L4LE-48WT:C is a 256MX32 LPDDR1 DRAM with 32-bit memory width. It operates synchronously at 1.8V, featuring self-refresh and four-bank page burst access mode. Suitable for applications requiring high memory density, fast access time of 5ns, and operating temperatures b/w -25 to 85°C.
MT40A2G4SA-062E:E by Micron Technology

MT40A2G4SA-062E:E

Micron Technology

Micron Technology's MT40A2G4SA-062E:E is a DDR4 DRAM with 2GX4 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
K4S641632H-TC60 by Samsung

K4S641632H-TC60

Samsung

Samsung's K4S641632H-TC60 is a 4MX16 DRAM with 166 MHz clock frequency and 3.3V supply voltage. Ideal for commercial applications, it offers synchronous operation, self-refresh capability, and a small outline package design.
MT8HTF12864HDZ-667H1 by Micron Technology

MT8HTF12864HDZ-667H1

Micron Technology

MT8HTF12864HDZ-667H1 by Micron Technology is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. It operates at 1.8V, has 200 terminals, and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with a memory density of 8589934592 bits.
IS42S16400J-7BL by Integrated Silicon Solution

IS42S16400J-7BL

Integrated Silicon Solution

IS42S16400J-7BL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access in commercial temperature environments.
EDB4432BBBJ-1D-F by Micron Technology

EDB4432BBBJ-1D-F

Micron Technology

Micron Technology's EDB4432BBBJ-1D-F is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices due to its very thin profile and fine pitch package style.
EDB4432BBBJ-1DAUT-F-R by Micron Technology

EDB4432BBBJ-1DAUT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAUT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for automotive applications due to its very thin profile, fine pitch grid array package style.
IS42S32400F-7TLI by Integrated Silicon Solution

IS42S32400F-7TLI

Integrated Silicon Solution

IS42S32400F-7TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. Ideal for industrial applications, it features common I/O type, self-refresh mode, and supports four-bank page burst access mode.
MT40A1G8WE-075E:BTR by Micron Technology

MT40A1G8WE-075E:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075E:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package and common I/O type, suitable for applications requiring high memory density and fast data processing in devices like servers and PCs.
MT48LC16M16A2P-75:DTR by Micron Technology

MT48LC16M16A2P-75:DTR

Micron Technology

MT48LC16M16A2P-75:DTR by Micron Technology is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V and is ideal for commercial applications requiring fast and reliable memory performance in a small outline package.
IS46TR16256AL-125KBLA2 by Integrated Silicon Solution

IS46TR16256AL-125KBLA2

Integrated Silicon Solution

IS46TR16256AL-125KBLA2 by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it offers 8192 refresh cycles and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.
MT40A1G16KNR-075:ETR by Micron Technology

MT40A1G16KNR-075:ETR

Micron Technology

MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
MT41K512M8DA-107:P by Micron Technology

MT41K512M8DA-107:P

Micron Technology

Micron Technology's MT41K512M8DA-107:P is a DDR3L DRAM with 512MX8 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package has 78 terminals in a grid array shape, suitable for applications requiring high memory density and low power consumption.
MT41J128M16JT-093G:K by Micron Technology

MT41J128M16JT-093G:K

Micron Technology

Micron Technology's MT41J128M16JT-093G:K is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.
K4S561632E-UC75 by Samsung

K4S561632E-UC75

Samsung

Samsung's K4S561632E-UC75 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.