Texas Instruments - TM4100EBD9-6

IS42S16400J-6BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz. It features self-refresh mode, 54 terminals in a thin profile grid array package, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage capabilities.

IS43TR16128B-15HBLI by Integrated Silicon Solution is a 128MX16 DDR3 DRAM with 667 MHz clock frequency. It operates asynchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON; Package Equivalence Code: BGA24,5X5,40;

Micron Technology's MT48LC8M16A2TG-75:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 133MHz clock frequency. Ideal for commercial applications, it offers 4096 refresh cycles and supports sequential burst lengths of 1,2,4,8.

IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.

IS42S16160J-7TLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features SYNCHRONOUS mode, SELF REFRESH capability, and FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high memory density and fast access times.

IS42S32400F-6BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times in a grid array package.

Micron Technology's MT46H64M32LFBQ-48IT:C is a 64MX32 LPDDR1 DRAM with 67108864 words, operating at 208 MHz. It features a very thin profile, fine pitch grid array package and supports synchronous operation with self-refresh capability. Ideal for industrial applications requiring fast memory access and low power consumption.

Alliance Memory's AS4C512M8D4-75BIN is a DDR4 DRAM with 512MX8 organization, operating at 1333 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

Samsung's K4D26323RA-GC2A is a DDR1 DRAM with 4MX32 organization, operating at 350 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

Kingston KVR16LN11/8 DDR DRAM Module features 1Gx64 organization, operates synchronously at 1.35V, and has a memory width of 64 bits. Ideal for applications requiring high-speed data processing in microelectronic assemblies with a max operating temperature of 85°C.

NT5AD512M16A4-GZ by Nanya Technology is a DDR4 DRAM with 512MX16 organization, operating at 1200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a thin profile and fine pitch package style.

Alliance Memory's AS4C16M16SA-6TINTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, ideal for industrial applications. Features include 3.3V supply voltage, 85°C operating temperature, and common I/O type. Suitable for systems requiring high-speed memory access in compact form factors.

IS42S32800J-6BLI by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has a temperature range of -40 to 85 °C, and features a thin profile grid array package. Ideal for industrial applications requiring high-speed memory access and low standby current consumption.

Micron Technology's MT48LC32M16A2TG-75IT:C is a 32MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package.

Alliance Memory's AS4C1G8MD3L-12BCNTR is a DDR3L DRAM with 1GX8 organization, operating at up to 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast data access in compact electronic devices.

Samsung M393B5673GB0-CH9 DDR DRAM MODULE features 256MX72 organization, operates at 667 MHz clock frequency, and has a memory density of 19327352832 bit. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.

Micron Technology's MT53E256M32D2FW-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.

Micron Technology's MT46H256M32L4LE-48WT:C is a 256MX32 LPDDR1 DRAM with 32-bit memory width. It operates synchronously at 1.8V, featuring self-refresh and four-bank page burst access mode. Suitable for applications requiring high memory density, fast access time of 5ns, and operating temperatures b/w -25 to 85°C.

Micron Technology's MT48LC4M32B2P-6A:LTR is a 3.3V Synchronous DRAM with 4MX32 organization, operating at 0-70°C. Featuring self-refresh and four-bank page burst access mode, it offers a memory density of 134217728 bits for commercial applications requiring fast access times of up to 5.4 ns.