Texas Instruments - TM4256GP9-15

  1. Home
  2. Texas Instruments - TM4256GP9-15
TM4256GP9-15 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TM4256GP9-15
Description DRAMs;
Datasheet TM4256GP9-15 Datasheet
In Stock5,791
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
5,791 - -

Popular Products

Category Top Products

MT48LC16M16A2B4-7EIT:G by Micron Technology

MT48LC16M16A2B4-7EIT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
MT46H32M16LFBF-6AAT:C by Micron Technology

MT46H32M16LFBF-6AAT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AAT:C is a 32MX16 LPDDR1 DRAM with 536870912-bit memory density. It operates at 166 MHz, has a very thin profile, and supports common I/O type. Ideal for industrial applications requiring fast access times and low standby current consumption.
MT40A2G8AG-062EAUT:F by Micron Technology

MT40A2G8AG-062EAUT:F

Micron Technology

Micron Technology's MT40A2G8AG-062EAUT:F is a DDR4 DRAM with 2GX8 organization, operating at a max clock frequency of 1600 MHz. It has a memory density of 17.18 Gb and is suitable for applications requiring high-speed synchronous memory.
IS42S16320D-7TLI-TR by Integrated Silicon Solution

IS42S16320D-7TLI-TR

Integrated Silicon Solution

IS42S16320D-7TLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation and self-refresh capability. It operates at 3.3V, has a clock frequency of 143MHz, and is ideal for industrial applications requiring high-speed memory access.
IS42S16400J-7BL by Integrated Silicon Solution

IS42S16400J-7BL

Integrated Silicon Solution

IS42S16400J-7BL by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply voltage, operating at 143 MHz clock frequency. It features self-refresh and common I/O for various applications requiring fast memory access in commercial temperature environments.
W972GG6KB25I by Winbond Electronics

W972GG6KB25I

Winbond Electronics

Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.
MT48LC32M16A2P-75:CTR by Micron Technology

MT48LC32M16A2P-75:CTR

Micron Technology

Micron Technology's MT48LC32M16A2P-75:CTR is a 32MX16 DRAM with 33554432 words and 536870912 bit memory density. Operating at 3.3V, it offers synchronous operation, self-refresh capability, and a max access time of 5.4 ns. Ideal for commercial applications requiring fast and reliable memory performance.
MT41J64M16JT-15EIT:GTR by Micron Technology

MT41J64M16JT-15EIT:GTR

Micron Technology

Micron Technology's MT41J64M16JT-15EIT:GTR is a DDR3 DRAM with 64MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data access in thin profile devices.
MT53E256M32D2DS-053WT:B by Micron Technology

MT53E256M32D2DS-053WT:B

Micron Technology

LPDDR4 DRAM;
MT48LC32M16A2P-75L:C by Micron Technology

MT48LC32M16A2P-75L:C

Micron Technology

MT48LC32M16A2P-75L:C by Micron Technology is a 32MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast memory access and low power consumption.
MT46H128M32L2KQ-6WT:B by Micron Technology

MT46H128M32L2KQ-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2KQ-6WT:B is a DDR1 DRAM with 128MX32 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.
IS42S16160G-7TLI by Integrated Silicon Solution

IS42S16160G-7TLI

Integrated Silicon Solution

IS42S16160G-7TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast memory access and low power consumption.
MT53E1G32D2FW-046AUT:A by Micron Technology

MT53E1G32D2FW-046AUT:A

Micron Technology

LPDDR4 DRAM;
IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR

Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
S27KL0642GABHB023 by Cypress Semiconductor

S27KL0642GABHB023

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE; Organization: 8MX8;
MT40A1G16KD-062EIT:ETR by Micron Technology

MT40A1G16KD-062EIT:ETR

Micron Technology

Micron Technology's MT40A1G16KD-062EIT:ETR is a DDR4 DRAM with 1GX16 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like computers and servers.
MT41J64M16TW-093:J by Micron Technology

MT41J64M16TW-093:J

Micron Technology

MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.
AS4C16M16SA-6BINTR by Alliance Memory

AS4C16M16SA-6BINTR

Alliance Memory

Alliance Memory's AS4C16M16SA-6BINTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, 85°C operating temp. Ideal for industrial applications, it features common I/O type, self-refresh mode, and thin profile grid array package.
IS42S16100H-7BL by Integrated Silicon Solution

IS42S16100H-7BL

Integrated Silicon Solution

IS42S16100H-7BL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at up to 143MHz clock frequency. It features dual bank page burst access mode and offers a memory density of 16777216 bits. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.
K4S281632K-UC60 by Samsung

K4S281632K-UC60

Samsung

Samsung's K4S281632K-UC60 is a 8MX16 DRAM with 200 MHz clock frequency. It operates synchronously at 3.3V, featuring 70°C max temp. Ideal for applications requiring high-speed memory access and low power consumption.