Texas Instruments - TM4256GU8-12

  1. Home
  2. Texas Instruments - TM4256GU8-12
TM4256GU8-12 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TM4256GU8-12
Description DRAMs;
Datasheet TM4256GU8-12 Datasheet
In Stock3,441
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,441 - -

Popular Products

Category Top Products

NT5CC64M16GP-DIH by Nanya Technology

NT5CC64M16GP-DIH

Nanya Technology

NT5CC64M16GP-DIH by Nanya Technology is a DDR3L DRAM with 64MX16 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
IS42S32400F-6BLI-TR by Integrated Silicon Solution

IS42S32400F-6BLI-TR

Integrated Silicon Solution

IS42S32400F-6BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, 166 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times in a grid array package.
IS42S16400J-6TLI by Integrated Silicon Solution

IS42S16400J-6TLI

Integrated Silicon Solution

IS42S16400J-6TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz Clock Frequency. Operating at 3.3V, it offers 4096 Refresh Cycles and supports Four Bank Page Burst Access Mode. Ideal for industrial applications requiring high-speed memory performance in compact form factors.
KM48V514BJ-6 by Samsung

KM48V514BJ-6

Samsung

Samsung's KM48V514BJ-6 is a 512Kx8 EDO DRAM with 3.3V supply, operating in asynchronous mode. It features 60ns access time, 1024 refresh cycles, and 70mA max supply current. Ideal for applications requiring fast page access and common I/O type in commercial temperature grade environments.
NT5CC128M16JR-EK by Nanya Technology

NT5CC128M16JR-EK

Nanya Technology

NT5CC128M16JR-EK by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in devices like smartphones, tablets, and networking equipment.
IS43TR16256B-125KBLI-TR by Integrated Silicon Solution

IS43TR16256B-125KBLI-TR

Integrated Silicon Solution

IS43TR16256B-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data access speeds.
MT40A1G8WE-083EAUT:BTR by Micron Technology

MT40A1G8WE-083EAUT:BTR

Micron Technology

Micron Technology's MT40A1G8WE-083EAUT:BTR is a DDR4 DRAM with 1GX8 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for applications requiring high-speed memory in automotive electronics and other industrial environments.
IS46TR16256BL-125KBLA2 by Integrated Silicon Solution

IS46TR16256BL-125KBLA2

Integrated Silicon Solution

IS46TR16256BL-125KBLA2 by Integrated Silicon Solution is a DDR3 DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory density of 4294967296 bits. Ideal for industrial applications requiring multi-bank page burst access mode and a temperature range from -40 to 105°C.
AS4C256M16D3A-12BIN by Alliance Memory

AS4C256M16D3A-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3A-12BIN is a DDR3 DRAM with 256MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and reliability in a compact grid array package.
S70KS1282GABHI020 by Cypress Semiconductor

S70KS1282GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;
MT41K512M16HA-125AIT:A by Micron Technology

MT41K512M16HA-125AIT:A

Micron Technology

Micron Technology's MT41K512M16HA-125AIT:A is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode.
M392B2G70BM0-YH9 by Samsung

M392B2G70BM0-YH9

Samsung

Samsung M392B2G70BM0-YH9 DRAM features 240 terminals, 1.35V supply, and 667MHz clock frequency. Ideal for servers due to its high memory density of 154618822656 bits and organization of 2GX72, offering fast data processing at temperatures ranging from 0 to 85°C.
MT46H32M16LFBF-5IT:CTR by Micron Technology

MT46H32M16LFBF-5IT:CTR

Micron Technology

MT46H32M16LFBF-5IT:CTR by Micron Technology is a 32MX16 LPDDR1 DRAM with 536870912 bit memory density. It operates at 1.8V, has a peak reflow temp of 260°C, and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring fast access times and low power consumption.
MT42C8256DJ-8 by Micron Technology

MT42C8256DJ-8

Micron Technology

Micron Technology's MT42C8256DJ-8 is a 256KX8 DRAM with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE WITH EDO access, and offers 80ns max access time. Ideal for video applications due to its high memory density of 2097152 bits and small outline package style.
AS4C16M16SA-7BCN by Alliance Memory

AS4C16M16SA-7BCN

Alliance Memory

Alliance Memory's AS4C16M16SA-7BCN is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 143 MHz clock frequency, suitable for commercial applications. Featuring self-refresh and common I/O type, it offers fast access time of 5.4 ns for high-performance memory solutions.
MT53D512M32D2DS-053WT:D by Micron Technology

MT53D512M32D2DS-053WT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-053WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 1.8V. It features a clock frequency of 1869.1 MHz, single bank page burst access mode, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT40A1G8SA-062EIT:E by Micron Technology

MT40A1G8SA-062EIT:E

Micron Technology

Micron Technology's MT40A1G8SA-062EIT:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for industrial applications with a temperature range of -40 to 95°C, it offers high memory density of 8589934592 bits and supports multi-bank page burst access mode.
IS42S32400F-6TLI by Integrated Silicon Solution

IS42S32400F-6TLI

Integrated Silicon Solution

IS42S32400F-6TLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 166 MHz clock frequency. Operating at 3.3V, it offers 4096 refresh cycles and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact package.
MT41K256M16TW-107:P/TR by Micron Technology

MT41K256M16TW-107:P/TR

Micron Technology

Micron Technology's MT41K256M16TW-107:P/TR is a DDR3L DRAM with 256MX16 organization, operating at 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT53E512M32D2FW-046AAT:D by Micron Technology

MT53E512M32D2FW-046AAT:D

Micron Technology

Micron Technology's MT53E512M32D2FW-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact package.