Texas Instruments - TM4256GV9-12

  1. Home
  2. Texas Instruments - TM4256GV9-12
TM4256GV9-12 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TM4256GV9-12
Description DRAMs;
Datasheet TM4256GV9-12 Datasheet
In Stock3,143
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,143 - -

Popular Products

Category Top Products

MT46H32M16LFBF-6LIT:B by Micron Technology

MT46H32M16LFBF-6LIT:B

Micron Technology

Micron Technology's MT46H32M16LFBF-6LIT:B is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features a 60-terminal grid array package, synchronous mode, and self-refresh capability. Ideal for industrial applications requiring fast access times and low power consumption.
IS42S16320D-7BLI by Integrated Silicon Solution

IS42S16320D-7BLI

Integrated Silicon Solution

IS42S16320D-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.
MT61K256M32JE-21:T by Micron Technology

MT61K256M32JE-21:T

Micron Technology

Micron Technology's MT61K256M32JE-21:T is a GDDR6 DRAM with 256MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in devices like graphics cards or gaming consoles.
AS4C32M16SB-7TIN by Alliance Memory

AS4C32M16SB-7TIN

Alliance Memory

Alliance Memory's AS4C32M16SB-7TIN is a 32MX16 SDRAM with 3.3V supply, operating from -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high-speed memory access in compact form factors.
W631GG6NB09I by Winbond Electronics

W631GG6NB09I

Winbond Electronics

Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.
MT41K64M16TW-107XIT:J by Micron Technology

MT41K64M16TW-107XIT:J

Micron Technology

Micron Technology's MT41K64M16TW-107XIT:J is a DDR3L DRAM with 64MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. This thin-profile package has 96 terminals in a grid array style, making it ideal for multi-bank page burst access applications.
NT5CC256M16ER-EKA by Nanya Technology

NT5CC256M16ER-EKA

Nanya Technology

NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
AS4C64M16D3LB-12BIN by Alliance Memory

AS4C64M16D3LB-12BIN

Alliance Memory

Alliance Memory's AS4C64M16D3LB-12BIN is a 64MX16 DDR3L DRAM with 1.35V supply, operating from -40 to 95 °C. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and thin profile grid array packaging.
AS4C256M16D3LC-12BANTR by Alliance Memory

AS4C256M16D3LC-12BANTR

Alliance Memory

Alliance Memory's AS4C256M16D3LC-12BANTR is a 256MX16 DDR3L DRAM with 800 MHz clock frequency, 1.35V supply voltage, and 105°C operating temperature. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type in a compact grid array package.
K4D263238I-UC50 by Samsung

K4D263238I-UC50

Samsung

Samsung's K4D263238I-UC50 is a 4MX32 GDDR1 DRAM with 200 MHz clock frequency. Operating at 2.5V, it offers 3-state output and supports synchronous mode for common I/O applications. With a compact flatpack design, it suits commercial-grade systems requiring fast memory access and low standby current consumption.
IS42S32400F-6TLI-TR by Integrated Silicon Solution

IS42S32400F-6TLI-TR

Integrated Silicon Solution

IS42S32400F-6TLI-TR by Integrated Silicon Solution is a 3.3V DRAM with 4MX32 organization, operating at 166 MHz. It features a small outline package and is ideal for industrial applications requiring high memory density and fast access times.
MT41K128M16JT-125IT:K by Micron Technology

MT41K128M16JT-125IT:K

Micron Technology

MT41K128M16JT-125IT:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a max supply voltage of 1.45V and offers a memory density of 2147483648 bits. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capabilities.
MT41K128M8DA-107:J by Micron Technology

MT41K128M8DA-107:J

Micron Technology

Micron Technology's MT41K128M8DA-107:J is a DDR3L DRAM with 128MX8 organization, operating at 933 MHz clock frequency. It features 1.35V supply voltage, 78 terminals in a thin profile grid array package. Ideal for high-speed applications requiring synchronous operation and common I/O type.
MT40A512M16LY-062EAT:E by Micron Technology

MT40A512M16LY-062EAT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAT:E is a DDR4 DRAM with 512MX16 organization and 8589934592 bit memory density. It operates at a voltage of 1.2V, has a temperature range of -40 to 105°C, and is suitable for industrial applications.
TC514400ASJL-70 by Toshiba

TC514400ASJL-70

Toshiba

Toshiba's TC514400ASJL-70 is a 1MX4 DRAM with 1048576 words, 4194304 bit memory density, and 70 ns max access time. Ideal for commercial applications requiring fast page access in a compact SMALL OUTLINE package with 20 terminals.
K4A8G085WB-BCPB by Samsung

K4A8G085WB-BCPB

Samsung

Samsung's K4A8G085WB-BCPB DDR4 DRAM features 1066 MHz clock frequency, 78 terminals, and 1.2V supply voltage. Ideal for high-performance computing applications requiring fast data processing and storage with a memory density of 8.59 Gb.
MT42L256M32D4KP-25IT:A by Micron Technology

MT42L256M32D4KP-25IT:A

Micron Technology

Micron Technology's MT42L256M32D4KP-25IT:A is a LPDDR2 DRAM with 256MX32 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT41K512M16VRN-107IT:P by Micron Technology

MT41K512M16VRN-107IT:P

Micron Technology

MT41K512M16VRN-107IT:P by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and single bank page burst access mode.
MT48LC32M16A2P-75 by Micron Technology

MT48LC32M16A2P-75

Micron Technology

MT48LC32M16A2P-75 by Micron Technology is a 32MX16 DRAM with 3.3V supply, 133MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring synchronous memory with common I/O and self-refresh capabilities.
IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR

Integrated Silicon Solution

IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.