Texas Instruments - TM4256HE4-12

  1. Home
  2. Texas Instruments - TM4256HE4-12
TM4256HE4-12 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TM4256HE4-12
Description DRAMs;
Datasheet TM4256HE4-12 Datasheet
In Stock8,311
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
8,311 - -

Popular Products

Category Top Products

MT41J64M16JT-15EAIT:G by Micron Technology

MT41J64M16JT-15EAIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EAIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A256M16LY-062EAIT:F by Micron Technology

MT40A256M16LY-062EAIT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 95°C.
IS42S16400J-7BLI-TR by Integrated Silicon Solution

IS42S16400J-7BLI-TR

Integrated Silicon Solution

IS42S16400J-7BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temp. Ideal for industrial applications requiring high memory density and fast access times.
M471B5173QH0-YK0 by Samsung

M471B5173QH0-YK0

Samsung

Samsung M471B5173QH0-YK0 DDR DRAM Module features 512MX64 organization, 1.35V nominal voltage, and 512M words code. Ideal for applications requiring high memory density and single bank page burst access mode in microelectronic assemblies.
MT47H128M8JN-3IT:H by Micron Technology

MT47H128M8JN-3IT:H

Micron Technology

MT47H128M8JN-3IT:H by Micron Technology is a DDR2 DRAM with 128MX8 organization and 1.8V nominal voltage. It operates synchronously at a max clock frequency of 333 MHz and is commonly used in industrial applications requiring high memory density and fast access times.
MT48LC16M16A2TG-75IT by Micron Technology

MT48LC16M16A2TG-75IT

Micron Technology

MT48LC16M16A2TG-75IT by Micron Technology is a 16MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
S70KS1282GABHB033 by Cypress Semiconductor

S70KS1282GABHB033

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Density: 134217728 bit; Maximum Standby Current: .0005 Amp;
MT41K1G8TRF-125IT:E by Micron Technology

MT41K1G8TRF-125IT:E

Micron Technology

Micron Technology's MT41K1G8TRF-125IT:E is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at 1.35V, suitable for applications requiring high-speed synchronous memory with low power consumption.
MT40A1G16RC-062E:B by Micron Technology

MT40A1G16RC-062E:B

Micron Technology

Micron Technology's MT40A1G16RC-062E:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in thin-profile devices.
MT48LC32M16A2TG-75:CTR by Micron Technology

MT48LC32M16A2TG-75:CTR

Micron Technology

Micron Technology's MT48LC32M16A2TG-75:CTR is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at 0-70°C. It features 33554432 words, 16-bit memory width, and 536870912 bit memory density. Ideal for applications requiring fast access time and synchronous operation.
MT48LC4M32B2B5-6AAAT:L by Micron Technology

MT48LC4M32B2B5-6AAAT:L

Micron Technology

Micron Technology's MT48LC4M32B2B5-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package style.
M378B5273CH0-CK0 by Samsung

M378B5273CH0-CK0

Samsung

Samsung's M378B5273CH0-CK0 DDR3 DRAM Module features 512MX64 organization, operates at 800 MHz, and has a memory width of 64. Ideal for high-performance computing applications requiring fast data processing and storage capabilities.
S27KS0642GABHI023 by Infineon Technologies

S27KS0642GABHI023

Infineon Technologies

Infineon's S27KS0642GABHI023 DRAM features 8MX8 organization, 200 MHz clock frequency, and 67108864 bit memory density. Ideal for applications requiring high-speed synchronous operation in a compact form factor with low power consumption.
W9825G6JB-6I by Winbond Electronics

W9825G6JB-6I

Winbond Electronics

W9825G6JB-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for industrial applications requiring fast data processing and common I/O type. With a thin profile package style and self-refresh capability, it offers reliable performance in various electronic devices.
S70KS1282GABHB020 by Infineon Technologies

S70KS1282GABHB020

Infineon Technologies

S70KS1282GABHB020 by Infineon Technologies is a 16MX8 DRAM with 1.8V supply voltage, operating at up to 200MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory such as automotive electronics or industrial control systems.
MT46H32M16LFBF-6AIT:C by Micron Technology

MT46H32M16LFBF-6AIT:C

Micron Technology

MT46H32M16LFBF-6AIT:C by Micron Technology is a 32MX16 DDR1 DRAM with a memory density of 536870912 bit. It operates at a max clock frequency of 166 MHz and has an operating temperature range of -40 to 85 °C. It is commonly used in industrial applications requiring high-speed synchronous memory.
NT5CC256M16ER-EKA by Nanya Technology

NT5CC256M16ER-EKA

Nanya Technology

NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT41K1G8RKB-107:PTR by Micron Technology

MT41K1G8RKB-107:PTR

Micron Technology

DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
MT48LC16M16A2P-75:DTR by Micron Technology

MT48LC16M16A2P-75:DTR

Micron Technology

MT48LC16M16A2P-75:DTR by Micron Technology is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V and is ideal for commercial applications requiring fast and reliable memory performance in a small outline package.
MT48LC4M32B2P-6IT:G by Micron Technology

MT48LC4M32B2P-6IT:G

Micron Technology

Micron Technology's MT48LC4M32B2P-6IT:G is a 3.3V Synchronous DRAM with 4MX32 organization, operating at -40 to 85 °C. It features self-refresh mode, 86 terminals in a small outline package, and offers fast access time of 5.5 ns. Ideal for industrial applications requiring high memory density and synchronous operation.