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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | TM4EP64BJN-50 |
| Description | EDO DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 2048; Package Shape: RECTANGULAR; |
| Datasheet | TM4EP64BJN-50 Datasheet |
| In Stock | 1,291 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .016 Amp |
| Organization: | 4MX64 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 25.53 mm |
| Access Mode: | SINGLE BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 3 V |
| Sub-Category: | DRAMs |
| Surface Mount: | NO |
| Maximum Supply Current: | 1920 mA |
| Terminal Finish: | GOLD |
| No. of Terminals: | 168 |
| No. of Words: | 4194304 words |
| Terminal Position: | DUAL |
| Package Style (Meter): | MICROELECTRONIC ASSEMBLY |
| Technology: | MOS |
| JESD-30 Code: | R-PDMA-N168 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 70 Cel |
| Package Code: | DIMM |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 268435456 bit |
| Self Refresh: | NO |
| Memory IC Type: | EDO DRAM MODULE |
| JESD-609 Code: | e4 |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 64 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | DIMM168 |
| Refresh Cycles: | 2048 |
| Length: | 133.35 mm |
| Maximum Access Time: | 50 ns |
| No. of Words Code: | 4M |
| Nominal Supply Voltage / Vsup (V): | 3.3 |
| Additional Features: | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH |
| Terminal Pitch: | 1.27 mm |
| Temperature Grade: | COMMERCIAL |
| Maximum Supply Voltage (Vsup): | 3.6 V |
| Power Supplies (V): | 3.3 |
