Texas Instruments - TMS626162-15

  1. Home
  2. Texas Instruments - TMS626162-15
TMS626162-15 by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TMS626162-15
Description DRAMs;
Datasheet TMS626162-15 Datasheet
In Stock4,154
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,154 - -

Popular Products

Category Top Products

AS4C512M16D3LA-10BIN by Alliance Memory

AS4C512M16D3LA-10BIN

Alliance Memory

Alliance Memory's AS4C512M16D3LA-10BIN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating from -40 to 95 °C. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high memory density in a compact grid array package.
KM4132G112Q-5 by Samsung

KM4132G112Q-5

Samsung

Samsung's KM4132G112Q-5 is a 1MX32 DRAM with 3.3V supply, operating at 200MHz clock frequency. Ideal for synchronous graphics RAM applications due to its 1048576 words capacity, 4.5ns access time, and dual bank page burst access mode.
IS42S32800J-6BLI-TR by Integrated Silicon Solution

IS42S32800J-6BLI-TR

Integrated Silicon Solution

IS42S32800J-6BLI-TR by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package.
MT46V16M16P-5BIT by Micron Technology

MT46V16M16P-5BIT

Micron Technology

Micron Technology's MT46V16M16P-5BIT is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features a small outline package, common I/O type, and self-refresh mode. Ideal for industrial applications requiring high memory density and fast access times.
MT46V32M16CV-5BIT:J by Micron Technology

MT46V32M16CV-5BIT:J

Micron Technology

MT46V32M16CV-5BIT:J by Micron Technology is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 200 MHz clock frequency, has 3-STATE output characteristics, and supports FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring fast data processing and high memory capacity.
NT5CC256M16ER-EKA by Nanya Technology

NT5CC256M16ER-EKA

Nanya Technology

NT5CC256M16ER-EKA by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT48LC2M32B2P-6AAIT:J by Micron Technology

MT48LC2M32B2P-6AAIT:J

Micron Technology

Micron Technology's MT48LC2M32B2P-6AAIT:J is a 3.3V, 2MX32 Synchronous DRAM with 67108864-bit memory density. Operating at -40 to 85 °C, it features a fast access time of 5.4 ns and is ideal for industrial applications requiring high-speed data processing.
AS4C1G8MD3L-12BCNTR by Alliance Memory

AS4C1G8MD3L-12BCNTR

Alliance Memory

Alliance Memory's AS4C1G8MD3L-12BCNTR is a DDR3L DRAM with 1GX8 organization, operating at up to 800 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high memory density and fast data access in compact electronic devices.
SQR-SD3M-8G1K8SNLB by Advantech

SQR-SD3M-8G1K8SNLB

Advantech

Advantech's SQR-SD3M-8G1K8SNLB DDR3L DRAM MODULE features 8GX8 organization, 1.35V supply voltage, and 85°C max operating temp. Ideal for applications requiring high memory density and fast synchronous operation in microelectronic assemblies.
AS4C32M16SB-7TCN by Alliance Memory

AS4C32M16SB-7TCN

Alliance Memory

Alliance Memory's AS4C32M16SB-7TCN is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85°C. Featuring self-refresh and four bank page burst access mode, it offers 33554432 words memory density for various commercial applications.
M471B5273CH0-CH9 by Samsung

M471B5273CH0-CH9

Samsung

Samsung M471B5273CH0-CH9 DDR DRAM Module features 256MX8 organization, operates at 667 MHz with 1.5V supply voltage. Ideal for high-performance computing applications due to its synchronous operation and self-refresh capability.
S70KS1282GABHB033 by Cypress Semiconductor

S70KS1282GABHB033

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Density: 134217728 bit; Maximum Standby Current: .0005 Amp;
MT40A256M16LY-062E:FTR by Micron Technology

MT40A256M16LY-062E:FTR

Micron Technology

MT40A256M16LY-062E:FTR by Micron Technology is a DDR4 DRAM with 256MX16 organization, operating at a max clock frequency of 1600 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
IS42SM16200D-6BLI by Integrated Silicon Solution

IS42SM16200D-6BLI

Integrated Silicon Solution

IS42SM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 3.3V, has dual bank page burst access mode, and offers a max access time of 5.5 ns. Ideal for industrial applications requiring high-speed and reliable memory performance in a compact grid array package.
MT48LC16M16A2P-6AXIT:G by Micron Technology

MT48LC16M16A2P-6AXIT:G

Micron Technology

Micron Technology's MT48LC16M16A2P-6AXIT:G is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, operating at 3.3V. It features a small outline, thin profile package and offers 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.
MT48LC4M32B2TG-7IT:G by Micron Technology

MT48LC4M32B2TG-7IT:G

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:G is a 4MX32 SDRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.
K4B2G0846C-HCH9 by Samsung

K4B2G0846C-HCH9

Samsung

Samsung's K4B2G0846C-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.
MT52L256M32D1PF-107WT:B by Micron Technology

MT52L256M32D1PF-107WT:B

Micron Technology

Micron Technology's MT52L256M32D1PF-107WT:B is a LPDDR3 DRAM with 256MX32 organization, 933 MHz clock frequency, and 1.2V nominal voltage. It is suitable for applications requiring high-speed memory access in mobile devices due to its low profile package and common I/O type.
MT53E256M32D2FW-046AAT:B by Micron Technology

MT53E256M32D2FW-046AAT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial devices.
MT48LC16M16A2P-6A:D by Micron Technology

MT48LC16M16A2P-6A:D

Micron Technology

MT48LC16M16A2P-6A:D by Micron Technology is a 16MX16 Synchronous DRAM with a max clock frequency of 167 MHz. It operates at a nominal voltage of 3.3V and has a memory density of 268435456 bits. This memory IC type is commonly used in applications requiring high-speed data storage and retrieval.