TMS6788-25N by Texas Instruments | Memory ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TMS6788-25N
Description	STANDARD SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Standby Current: .01 Amp;
Datasheet	TMS6788-25N Datasheet
In Stock	2,625

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Standby Current:	.01 Amp
Organization:	16KX4
Output Characteristics:	3-STATE
Sub-Category:	SRAMs
Surface Mount:	NO
Maximum Supply Current:	120 mA
No. of Terminals:	22
No. of Words:	16384 words
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PDIP-T22
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	DIP
Input/Output Type:	COMMON
Memory Density:	65536 bit
Memory IC Type:	STANDARD SRAM
Minimum Operating Temperature:	0 Cel
Memory Width:	4
Qualification:	Not Qualified
Package Equivalence Code:	DIP22,.3
Maximum Access Time:	25 ns
No. of Words Code:	16K
Nominal Supply Voltage / Vsup (V):	5
Parallel or Serial:	PARALLEL
Terminal Pitch:	2.54 mm
Temperature Grade:	COMMERCIAL
Power Supplies (V):	5

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,625	-	-

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e3; Minimum DS Breakdown Voltage: 60 V;

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Vishay Intertechnology's BSS138 is a N-CHANNEL FET with SINGLE configuration and ENHANCEMENT MODE operation. It features 0.35W power dissipation, METAL-OXIDE SEMICONDUCTOR tech, and 150°C max temp. Ideal for surface mount applications in various electronic circuits requiring efficient power management.