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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | TPIC5203DR |
Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 1.6 A; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; |
Datasheet | TPIC5203DR Datasheet |
In Stock | 1,858 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 1.6 A |
Surface Mount: | YES |
No. of Terminals: | 8 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Power Dissipation Ambient: | .962 W |
Maximum Drain-Source On Resistance: | .31 ohm |
Maximum Feedback Capacitance (Crss): | 125 pF |
JEDEC-95 Code: | MS-012AA |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Additional Features: | ESD PROTECTED |