Texas Instruments - TPIC5322LDR

TPIC5322LDR by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number TPIC5322LDR
Description N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 1.09 W; JESD-30 Code: R-PDSO-G16; Maximum Turn On Time (ton): 52 ns;
Datasheet TPIC5322LDR Datasheet
In Stock1,044
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 52 ns
Maximum Drain Current (ID): 1 A
Maximum Pulsed Drain Current (IDM): 3 A
Surface Mount: YES
No. of Terminals: 16
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 66 ns
JESD-30 Code: R-PDSO-G16
No. of Elements: 3
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 1.09 W
Maximum Drain-Source On Resistance: .525 ohm
Avalanche Energy Rating (EAS): 40.5 mJ
Maximum Feedback Capacitance (Crss): 40 pF
JEDEC-95 Code: MS-012AC
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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