TPIC5323LDR by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TPIC5323LDR
Description	N-CHANNEL; Configuration: SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V; Maximum Feedback Capacitance (Crss): 28 pF;
Datasheet	TPIC5323LDR Datasheet
In Stock	3,027

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 3 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	80 ns
Maximum Drain Current (ID):	1 A
Maximum Pulsed Drain Current (IDM):	3 A
Surface Mount:	YES
No. of Terminals:	16
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	95 ns
JESD-30 Code:	R-PDSO-G16
No. of Elements:	3
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	1.09 W
Maximum Drain-Source On Resistance:	.65 ohm
Avalanche Energy Rating (EAS):	22.5 mJ
Maximum Feedback Capacitance (Crss):	28 pF
JEDEC-95 Code:	MS-012AC
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE, ESD PROTECTED

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,027	-	-

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