Texas Instruments - TPS1101PWR

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TPS1101PWR by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number TPS1101PWR
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .71 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
Datasheet TPS1101PWR Datasheet
In Stock3,136
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.18 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 16
Maximum Power Dissipation (Abs): .71 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G16
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: .71 W
Maximum Drain-Source On Resistance: .19 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 15 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Maximum Drain Current (Abs) (ID): 2.18 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
3,136 $1.000 $3,136.000

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