Texas Instruments - TPS1120DRG4

TPS1120DRG4 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number TPS1120DRG4
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .84 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING;
Datasheet TPS1120DRG4 Datasheet
In Stock4,691
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.17 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 8
Maximum Power Dissipation (Abs): .84 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .4 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 15 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Maximum Drain Current (Abs) (ID): 1.17 A
Peak Reflow Temperature (C): 260
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