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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | TPS1120Y |
| Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .4 ohm; |
| Datasheet | TPS1120Y Datasheet |
| In Stock | 1,197 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1.17 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 5 |
| Minimum DS Breakdown Voltage: | 15 V |
| Qualification: | Not Qualified |
| Terminal Position: | UPPER |
| Package Style (Meter): | UNCASED CHIP |
| JESD-30 Code: | R-XUUC-N5 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Additional Features: | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .4 ohm |









