Texas Instruments - TPS1120Y

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TPS1120Y by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number TPS1120Y
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .4 ohm;
Datasheet TPS1120Y Datasheet
In Stock2,084
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.17 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 5
Minimum DS Breakdown Voltage: 15 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .4 ohm
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