TPS61021DSGT by Texas Instruments | Other Function Semiconductors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TPS61021DSGT
Description	SWITCHING REGULATOR; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: SQUARE; Surface Mount: YES;
Datasheet	TPS61021DSGT Datasheet
In Stock	1,751

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Nominal Output Voltage:	3.3 V
Maximum Time At Peak Reflow Temperature (s):	30
Width (mm):	2 mm
Maximum Seated Height:	.8 mm
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD SILVER
Switcher Config:	BOOST
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
JESD-30 Code:	S-PDSO-N8
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Maximum Operating Temperature:	85 Cel
Package Code:	HVSON
Control Technique:	PULSE WIDTH MODULATION
Moisture Sensitivity Level (MSL):	2
Maximum Switching Frequency:	2000 kHz
Minimum Input Voltage:	.5 V
Maximum Input Voltage:	4.4 V
JESD-609 Code:	e4
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Nominal Input Voltage:	2.4 V
Other IC type:	SWITCHING REGULATOR
Length:	2 mm
Additional Features:	ALSO OPERATES IN PFM CONTROL TECHNIQUE, ALSO OPERATES IN ADJUSTABLE MODE FROM 1.8 TO 4V
Peak Reflow Temperature (C):	260
Terminal Pitch:	.5 mm
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,751	-	-

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;

FDV303N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.68A Drain Current, and 0.45 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C. Package style is SMALL OUTLINE with GULL WING terminals for surface mount assembly.