TPX73028DBVR by Texas Instruments | Regulators

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TPX73028DBVR
Description	FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR; No. of Terminals: 5; Package Code: LSSOP; Terminal Form: GULL WING; Maximum Voltage Tolerance: 2 %; Maximum Input Voltage: 5.5 V;
Datasheet	TPX73028DBVR Datasheet
In Stock	425

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Seated Height:	1.45 mm
Surface Mount:	YES
Regulator Type:	FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
Maximum Output Current-1:	.2 A
No. of Terminals:	5
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
Technology:	BICMOS
JESD-30 Code:	R-PDSO-G5
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Nominal Output Voltage-1:	2.8 V
Operating Temperature (TJ-Max):	125 Cel
Package Code:	LSSOP
Qualification Status:	Not Qualified
Width:	1.6 mm
Maximum Dropout Voltage-1:	.21 V
Minimum Input Voltage:	2.7 V
Maximum Output Voltage-1:	2.856 V
Maximum Input Voltage:	5.5 V
Minimum Output Voltage-1:	2.744 V
Maximum Voltage Tolerance:	2 %
No. of Functions:	1
Operating Temperature (TJ-Min):	-40 Cel
Length:	2.9 mm
Terminal Pitch:	.95 mm

Pricing (USD)

Qty.	Unit Price	Ext. Price
425	-	-

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RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

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RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;