TSB41BA3BIGGM by Texas Instruments | Peripheral ICs

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TSB41BA3BIGGM
Description	SERIAL IO/COMMUNICATION CONTROLLER, SERIAL; Temperature Grade: INDUSTRIAL; Terminal Form: BALL; No. of Terminals: 80; Package Code: LFBGA; Package Shape: SQUARE;
Datasheet	TSB41BA3BIGGM Datasheet
In Stock	4,366

NAME	DESCRIPTION
Minimum Supply Voltage:	1.75 V
Package Body Material:	PLASTIC/EPOXY
Nominal Supply Voltage:	1.85 V
Maximum Seated Height:	1.4 mm
Surface Mount:	YES
No. of Terminals:	80
No. of Serial I/Os:	3
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, LOW PROFILE, FINE PITCH
Address Bus Width:	2
Maximum Data Transfer Rate:	50 MBps
Technology:	CMOS
JESD-30 Code:	S-PBGA-B80
Maximum Clock Frequency:	49.152 MHz
Package Shape:	SQUARE
Terminal Form:	BALL
Maximum Operating Temperature:	85 Cel
Package Code:	LFBGA
Width:	10 mm
Peripheral IC Type:	SERIAL IO/COMMUNICATION CONTROLLER, SERIAL
Maximum Supply Voltage:	2 V
Low Power Mode:	YES
Boundary Scan:	NO
External Data Bus Width:	8
Minimum Operating Temperature:	-40 Cel
Qualification:	Not Qualified
Length:	10 mm
Additional Features:	ALSO REQUIRES 3.3V SUPPLY
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,366	-	-

PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.

Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.

RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;