UCC2819ANG4 by Texas Instruments | Other Function Semiconductors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	UCC2819ANG4
Description	POWER FACTOR CONTROLLER; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
Datasheet	UCC2819ANG4 Datasheet
In Stock	1,041

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Control Mode:	CURRENT-MODE
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Width (mm):	7.62 mm
Maximum Seated Height:	5.08 mm
Maximum Output Current:	1.2 A
Maximum Supply Current (Isup):	6 mA
Sub-Category:	Switching Regulator or Controllers
Surface Mount:	NO
Switcher Config:	BOOST
No. of Terminals:	16
Terminal Position:	DUAL
Package Style (Meter):	IN-LINE
Technology:	BICMOS
JESD-30 Code:	R-PDIP-T16
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	85 Cel
Package Code:	DIP
Nominal Supply Voltage (Vsup):	12 V
Control Technique:	PULSE WIDTH MODULATION
Maximum Switching Frequency:	120 kHz
Minimum Input Voltage:	10.8 V
Maximum Input Voltage:	17 V
Minimum Operating Temperature:	-40 Cel
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	DIP16,.3
Nominal Input Voltage:	12 V
Other IC type:	POWER FACTOR CONTROLLER
Length:	19.305 mm
Peak Reflow Temperature (C):	NOT SPECIFIED
Terminal Pitch:	2.54 mm
Temperature Grade:	INDUSTRIAL
Power Supplies (V):	12

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,041	-	-

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;

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