Texas Instruments - ULN2003AN

  1. Home
  2. Texas Instruments - ULN2003AN
ULN2003AN by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number ULN2003AN
Description NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Terminals: 16; Maximum VCEsat: 1.6 V;
Datasheet ULN2003AN Datasheet
In Stock36,358
NAME DESCRIPTION
Other Names: 2156-ULN2003AN
-296-1979-5-ND
-ULN2003ANE4-NDR
296-1979-5
-296-1979-5
TEXTISULN2003AN
-296-1979
-ULN2003ANE4
296-1979
-ULN2003AN-NDR
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Maximum Time At Peak Reflow Temperature (s): NOT APPLICABLE
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: MS-001BB
Polarity or Channel Type: NPN
Surface Mount: NO
Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
JESD-609 Code: e4
No. of Terminals: 16
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): IN-LINE
JESD-30 Code: R-PDIP-T16
No. of Elements: 7
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): NOT APPLICABLE
Maximum VCEsat: 1.6 V
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
36,358 - -

Popular Products

Category Top Products

TIP35C by Texas Instruments

TIP35C

Texas Instruments

TIP35C by Texas Instruments is a NPN BJT transistor with 100V VCEO, 25A IC, and 125W Ptot. Ideal for switching applications due to its high power dissipation capability. Features single configuration in a rectangular package suitable for flange mount installations.
ULN2804A by Allegro MicroSystems

ULN2804A

Allegro MicroSystems

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR; Terminal Form: THROUGH-HOLE;
TIP110 by Fairchild Semiconductor

TIP110

Fairchild Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Style (Meter): FLANGE MOUNT;
JANTXV2N3055 by Microchip Technology

JANTXV2N3055

Microchip Technology

JANTXV2N3055 by Microchip Tech is a NPN BJT with 115W power dissipation, 70V max collector-emitter voltage, and 15A max collector current. Ideal for high-power applications in military electronics due to MIL-19500/407D standard compliance and flange mount package style.
BD679A by Continental Device India

BD679A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP117 by Texas Instruments

TIP117

Texas Instruments

TIP117 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W and max. collector current of 4A. Ideal for switching applications, it has a min DC current gain of 500 (hFE) and operates at up to 150°C.
MJE3055T by Fairchild Semiconductor

MJE3055T

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP31C by Power Innovations

TIP31C

Power Innovations

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Case Connection: COLLECTOR; JESD-30 Code: R-PSFM-T3;
D45VH10G by Onsemi

D45VH10G

Onsemi

D45VH10G by Onsemi is a PNP BJT transistor with 80V VCE, 15A IC, and 83W power dissipation. Ideal for switching applications, it has a min hFE of 20 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
TIP3055 by Mospec Semiconductor

TIP3055

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
MJE350 by Central Semiconductor

MJE350

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
TIP125 by Bourns

TIP125

Bourns

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
MJD45H11T4 by STMicroelectronics

MJD45H11T4

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
BD679 by Central Semiconductor

BD679

Central Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
TIP112 by Baneasa S A

TIP112

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
TIP122 by Rectron

TIP122

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;
TIP120 by Rectron

TIP120

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-609 Code: e3; Package Style (Meter): FLANGE MOUNT;
BD243C by Onsemi

BD243C

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD139 by Motorola

BD139

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Transistor Application: AMPLIFIER; Maximum VCEsat: .5 V;
TIP122 by Kec

TIP122

Kec

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;