Texas Instruments - ULN2074NE-00

TIP47 by Samsung is a NPN power bipolar junction transistor with a maximum power dissipation of 40W and a maximum operating temperature of 150 °C. It has a maximum collector-emitter voltage of 250V and a maximum collector current of 1A. This transistor is designed for switching applications and has a minimum DC current gain of 10. Its package style is TO-220AB with a rectangular shape and through-hole terminal form.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;

Power Bipolar Transistors; Surface Mount: NO; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;

TIP41CTU by Onsemi is a NPN power BJT with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Terminal Position: SINGLE;

The Onsemi BD244CG is a PNP BJT transistor with 100V VCEO, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 15 and fT of 3MHz for efficient performance.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 8 A; Maximum Collector-Emitter Voltage: 100 V; No. of Elements: 1; Transistor Element Material: SILICON;

TIP122TU by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 100V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and terminal form through-hole, it offers high power dissipation up to 65W in various electronic designs.