Toshiba - 1S2187

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: UNSPECIFIED; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SBL-801 by Onsemi is a surface mount mixer diode with GaAs element. It operates b/w 11-100 GHz, with max temp of 150 °C. Ideal for microwave applications requiring high frequency mixing and detection.

The Panasonic DB3J316F0L is a microwave mixer diode with 2 elements, Schottky technology, and a max forward voltage of 0.55V. It operates in the very high-frequency band, has a package style of small outline, and can handle temperatures from -40°C to 85°C. Ideal for applications requiring high-frequency mixing and detection in compact electronic devices.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

The Panasonic DB3X317K0L is a high-frequency mixer diode with Schottky technology. It operates up to 85 GHz, has a max forward voltage of 0.52 V, and can handle an output current of 1 A. Ideal for microwave applications requiring high-frequency signal mixing and detection in compact electronic devices.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TGD0623XSMX by Texas Instruments is a single microwave mixer diode with Schottky technology. It operates in the very high frequency to millimeter wave band, suitable for applications requiring isolated case connection. This surface-mount diode has a ceramic, metal-sealed co-fired package body and wrap-around terminal form.

MIXER DIODE; Terminal Position: QUAD; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

MIXER DIODE; Terminal Position: TRIPLE; Terminal Form: FLAT; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TGD0653SSMX by Texas Instruments is a single Schottky mixer diode with Gallium Arsenide element. Operating in very high frequency to millimeter wave band, it comes in a ceramic, metal-sealed co-fired package suitable for surface mount applications. With isolated case connection and wrap-around terminals, it is ideal for RF and microwave systems requiring high-frequency mixing and detection capabilities.

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

1PS79SB17,115 by NXP Semiconductors is a single Schottky mixer diode with a max forward voltage of 0.35V and a max repetitive peak reverse voltage of 4V. It has a diode capacitance of 1pF, operates at temperatures up to 150°C, and is suitable for microwave applications requiring high-frequency signal mixing and detection.

1N5712-AR2 by STMicroelectronics is a Schottky mixer diode with 1.2 pF capacitance, operating from -65 to 200 °C. Ideal for VHF to UHF applications due to its isolated case connection and single configuration in a glass package. With a max power dissipation of 0.43 W, it offers reliable performance in high-frequency circuits.

BAT15099E6433HTMA1 by Infineon Technologies is a Schottky mixer diode with low barrier type, suitable for X band applications. Featuring separate configuration with 2 elements, it has a max power dissipation of 0.1W and operates at temperatures up to 150°C. This surface-mount diode in small outline package is ideal for microwave mixer and detector applications.

Infineon's BAT6804E6327HTSA1 is a Schottky mixer diode with 2 elements, suitable for VHF to UHF applications. It features a max power dissipation of 0.15W and a diode capacitance of 1pF. This series-connected diode has a small outline package shape and operates at temperatures up to 150°C, making it ideal for high-frequency circuit designs.

DAP222M3T5G by Onsemi is a microwave mixer diode with common anode config, 2 elements, and 3.5 pF capacitance. It is used in applications requiring small outline surface mount diodes for high-frequency signal mixing and detection at temperatures up to 150°C.

MMDL301T1G by Onsemi is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, with a max forward voltage of 0.45V. This small outline diode has a max power dissipation of 0.2W and is suitable for applications requiring high-frequency signal mixing and detection.