Toshiba - 1SV103

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 30 V; Nominal Diode Capacitance: 19.25 pF;

TIV306 by Texas Instruments is a single varactor diode with a min quality factor of 200, ideal for applications requiring variable capacitance. With a nominal capacitance of 7 pF and breakdown voltage of 20 V, it offers high performance in RF tuning circuits. The diode's ceramic package and isolated case connection ensure reliable operation with a max power dissipation of 0.25 W.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 12 V; Minimum Quality Factor: 66; Nominal Diode Capacitance: .9 pF;

The Onsemi MV104 is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and breakdown voltage of 32 V. Ideal for RF applications due to its high-quality factor and precise capacitance control in communication systems.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Infineon's BB659C02VH7902XTSA1 is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 min capacitance ratio. Ideal for very high frequency applications, it operates b/w -55°C to 150°C in small outline SMD package.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBV2105LT1 by Onsemi is a varactor diode with a min quality factor of 400, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 15 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

BBY40TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning circuits, it offers reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4813 by Onsemi is a Varactor Diode with a Min Quality Factor of 15, Max Reverse Current of 0.005 uA, and Nominal Diode Capacitance of 68 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in communication systems.

MV104RLRP by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 100 and a Nominal Capacitance of 39.5 pF. Commonly used in RF applications, it has a Max Operating Temperature of 125 °C and a Min Breakdown Voltage of 32V.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SMV1235-004LF by Skyworks Solutions is a Varactor Diode with 11.5pF capacitance, 15V breakdown voltage, and 750 min quality factor. Commonly used in S Band applications for RF tuning due to its hyperabrupt diode classification and small outline package style.

The Onsemi SVC707 is a single varactor diode with 19.92 pF capacitance and 15 V breakdown voltage. It is used in applications requiring variable capacitance, such as tuning circuits in RF communication systems. The diode's silicon element and through-hole terminal form make it suitable for high temperature environments up to 150 °C.